Confined Energy State Based Hypothetical Observations about Device Parameters of AlGaN / GaN HEMT
In this paper, the gate threshold voltage of AlGaN / GaN HEMT devices has been analytically predicted based on the calculated energy levels inside triangular quantum well at the hetero-interface and found to be comparable with experimental data. The conceptual explanation of device linearity in larg...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2015-03-01
|
| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2015/1/articles/jnep_2015_V7_01006.pdf |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | In this paper, the gate threshold voltage of AlGaN / GaN HEMT devices has been analytically predicted based on the calculated energy levels inside triangular quantum well at the hetero-interface and found to be comparable with experimental data. The conceptual explanation of device linearity in large signal applications has been presented in terms of quantized energy levels in the quantum well. The dependence of threshold voltage and linear operable gate voltage range on a newly introduced parameter named “Surface Factor” is analyzed as well. |
|---|---|
| ISSN: | 2077-6772 |