Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface
Abstract A transistor is fabricated with a 2D electron gas (2DEG) channel at the Al2O3 (AO)/SrTiO3 (STO) interface. The threshold voltage (Vth) shift of the 2DEG channel in the Pt/AO/2DEG/STO stack induced by negative bias stress is investigated. Two‐terminal current–voltage and capacitance–voltage...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2020-06-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.201901286 |
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