Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface
Abstract A transistor is fabricated with a 2D electron gas (2DEG) channel at the Al2O3 (AO)/SrTiO3 (STO) interface. The threshold voltage (Vth) shift of the 2DEG channel in the Pt/AO/2DEG/STO stack induced by negative bias stress is investigated. Two‐terminal current–voltage and capacitance–voltage...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2020-06-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.201901286 |
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| _version_ | 1850075555296182272 |
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| author | Taehwan Moon Hyun Jae Lee Seung Dam Hyun Baek Su Kim Ho Hyun Kim Cheol Seong Hwang |
| author_facet | Taehwan Moon Hyun Jae Lee Seung Dam Hyun Baek Su Kim Ho Hyun Kim Cheol Seong Hwang |
| author_sort | Taehwan Moon |
| collection | DOAJ |
| description | Abstract A transistor is fabricated with a 2D electron gas (2DEG) channel at the Al2O3 (AO)/SrTiO3 (STO) interface. The threshold voltage (Vth) shift of the 2DEG channel in the Pt/AO/2DEG/STO stack induced by negative bias stress is investigated. Two‐terminal current–voltage and capacitance–voltage characterization through the gate and the source reveals that the metallic 2DEG channel turns into a semiconducting channel when the negative bias stress is applied. Transfer curve measurement with various stress conditions on the 2DEG field‐effect transistor is performed to evaluate the effect of the negative bias stress. The Vth becomes positive, and the channel conductance decreases after the application of negative bias stress. These variations are promoted by large stress bias and temperature. Electron energy loss spectroscopy analysis via scanning transmission electron microscopy reveals that the chemical state of the interface changes from oxygen‐deficient to stoichiometric. Therefore, the change in the channel state from metallic to semiconducting originates from the decrease of oxygen vacancy concentration at the interface. |
| format | Article |
| id | doaj-art-97ce2dbd47df464c977e4f3ad55897d5 |
| institution | DOAJ |
| issn | 2199-160X |
| language | English |
| publishDate | 2020-06-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-97ce2dbd47df464c977e4f3ad55897d52025-08-20T02:46:17ZengWiley-VCHAdvanced Electronic Materials2199-160X2020-06-0166n/an/a10.1002/aelm.201901286Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 InterfaceTaehwan Moon0Hyun Jae Lee1Seung Dam Hyun2Baek Su Kim3Ho Hyun Kim4Cheol Seong Hwang5Department of Materials Science and Engineering and Inter‐University Semiconductor Research Center Seoul National University Seoul 08826 Republic of KoreaDepartment of Materials Science and Engineering and Inter‐University Semiconductor Research Center Seoul National University Seoul 08826 Republic of KoreaDepartment of Materials Science and Engineering and Inter‐University Semiconductor Research Center Seoul National University Seoul 08826 Republic of KoreaDepartment of Materials Science and Engineering and Inter‐University Semiconductor Research Center Seoul National University Seoul 08826 Republic of KoreaDepartment of Materials Science and Engineering and Inter‐University Semiconductor Research Center Seoul National University Seoul 08826 Republic of KoreaDepartment of Materials Science and Engineering and Inter‐University Semiconductor Research Center Seoul National University Seoul 08826 Republic of KoreaAbstract A transistor is fabricated with a 2D electron gas (2DEG) channel at the Al2O3 (AO)/SrTiO3 (STO) interface. The threshold voltage (Vth) shift of the 2DEG channel in the Pt/AO/2DEG/STO stack induced by negative bias stress is investigated. Two‐terminal current–voltage and capacitance–voltage characterization through the gate and the source reveals that the metallic 2DEG channel turns into a semiconducting channel when the negative bias stress is applied. Transfer curve measurement with various stress conditions on the 2DEG field‐effect transistor is performed to evaluate the effect of the negative bias stress. The Vth becomes positive, and the channel conductance decreases after the application of negative bias stress. These variations are promoted by large stress bias and temperature. Electron energy loss spectroscopy analysis via scanning transmission electron microscopy reveals that the chemical state of the interface changes from oxygen‐deficient to stoichiometric. Therefore, the change in the channel state from metallic to semiconducting originates from the decrease of oxygen vacancy concentration at the interface.https://doi.org/10.1002/aelm.2019012862D electron gasSrTiO 3threshold voltagetransistors |
| spellingShingle | Taehwan Moon Hyun Jae Lee Seung Dam Hyun Baek Su Kim Ho Hyun Kim Cheol Seong Hwang Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface Advanced Electronic Materials 2D electron gas SrTiO 3 threshold voltage transistors |
| title | Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface |
| title_full | Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface |
| title_fullStr | Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface |
| title_full_unstemmed | Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface |
| title_short | Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface |
| title_sort | origin of the threshold voltage shift in a transistor with a 2d electron gas channel at the al2o3 srtio3 interface |
| topic | 2D electron gas SrTiO 3 threshold voltage transistors |
| url | https://doi.org/10.1002/aelm.201901286 |
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