Multi-Wavelength Pulse Generation Using Narrow-Gap Topological Crystalline Insulator Pb<sub>1-X</sub>Sn<sub>X</sub>Te
A multi-wavelength pulse is generated using chemical vapor deposition method (CVD) to fabricate the topological crystalline insulator (TCI) Pb<sub>1-X</sub>Sn<sub>X</sub>Te as a saturated absorber (SA). Compared with other SA materials, Pb<sub>1-X</sub>Sn<sub&g...
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IEEE
2023-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/10246977/ |
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| author | Siyu Li Xin Xie Xuefen Kan Yan Lu Qiang Yu Xinxin Zhao Cheng Yin Xianping Wang |
| author_facet | Siyu Li Xin Xie Xuefen Kan Yan Lu Qiang Yu Xinxin Zhao Cheng Yin Xianping Wang |
| author_sort | Siyu Li |
| collection | DOAJ |
| description | A multi-wavelength pulse is generated using chemical vapor deposition method (CVD) to fabricate the topological crystalline insulator (TCI) Pb<sub>1-X</sub>Sn<sub>X</sub>Te as a saturated absorber (SA). Compared with other SA materials, Pb<sub>1-X</sub>Sn<sub>X</sub>Te have advantages of narrow bandgap and high optical absorption in the near-infrared region. The laser produced a stable four-wavelength lasing configuration characterized by a wavelength spacing of approximately 2 nm, with pulse duration, repetition rate, and signal-to-noise ratio (SNR) of 0.899 to 0.854 µs, 1.08 to 1.15 MHz, and 31.5 dB, respectively. The results indicate that the Pb<sub>1-X</sub>Sn<sub>X</sub>Te-SA is suitable for pulsed generation in the near-infrared region and its potential in various fields, including super-resolution imaging, high-density optical storage, and three-dimensional laser lithography. |
| format | Article |
| id | doaj-art-978070f908564c2d8b27ac3402c48ecc |
| institution | OA Journals |
| issn | 1943-0655 |
| language | English |
| publishDate | 2023-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-978070f908564c2d8b27ac3402c48ecc2025-08-20T02:38:02ZengIEEEIEEE Photonics Journal1943-06552023-01-011551410.1109/JPHOT.2023.331398310246977Multi-Wavelength Pulse Generation Using Narrow-Gap Topological Crystalline Insulator Pb<sub>1-X</sub>Sn<sub>X</sub>TeSiyu Li0Xin Xie1Xuefen Kan2Yan Lu3https://orcid.org/0000-0003-4653-3374Qiang Yu4https://orcid.org/0000-0003-2172-8861Xinxin Zhao5Cheng Yin6Xianping Wang7https://orcid.org/0000-0001-5228-578XJiangxi Key Laboratory of Photoelectronics and Telecommunication, College of Physics and Communication Electronics, Jiangxi Normal University, Nanchang, ChinaJiangxi Key Laboratory of Photoelectronics and Telecommunication, College of Physics and Communication Electronics, Jiangxi Normal University, Nanchang, ChinaSchool of Transportation Engineering, Jiangsu Shipping College, Nantong, ChinaSchool of Transportation Engineering, Jiangsu Shipping College, Nantong, ChinaCAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, ChinaInstitute of Energy, Hefei Comprehensive National Science Center, Hefei, ChinaKey Laboratory of Power Transmission and Distribution Equipment Technology, Hohai University, Changzhou, ChinaJiangxi Key Laboratory of Photoelectronics and Telecommunication, College of Physics and Communication Electronics, Jiangxi Normal University, Nanchang, ChinaA multi-wavelength pulse is generated using chemical vapor deposition method (CVD) to fabricate the topological crystalline insulator (TCI) Pb<sub>1-X</sub>Sn<sub>X</sub>Te as a saturated absorber (SA). Compared with other SA materials, Pb<sub>1-X</sub>Sn<sub>X</sub>Te have advantages of narrow bandgap and high optical absorption in the near-infrared region. The laser produced a stable four-wavelength lasing configuration characterized by a wavelength spacing of approximately 2 nm, with pulse duration, repetition rate, and signal-to-noise ratio (SNR) of 0.899 to 0.854 µs, 1.08 to 1.15 MHz, and 31.5 dB, respectively. The results indicate that the Pb<sub>1-X</sub>Sn<sub>X</sub>Te-SA is suitable for pulsed generation in the near-infrared region and its potential in various fields, including super-resolution imaging, high-density optical storage, and three-dimensional laser lithography.https://ieeexplore.ieee.org/document/10246977/Pb<named-content xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" content-type="math" xlink:type="simple"> <inline-formula> <tex-math notation="LaTeX">$_{1-X} Sn_{X}Te$</tex-math> </inline-formula> </named-content>saturable absorbertopological crystalline insulatorpulse laser |
| spellingShingle | Siyu Li Xin Xie Xuefen Kan Yan Lu Qiang Yu Xinxin Zhao Cheng Yin Xianping Wang Multi-Wavelength Pulse Generation Using Narrow-Gap Topological Crystalline Insulator Pb<sub>1-X</sub>Sn<sub>X</sub>Te IEEE Photonics Journal Pb<named-content xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" content-type="math" xlink:type="simple"> <inline-formula> <tex-math notation="LaTeX">$_{1-X} Sn_{X}Te$</tex-math> </inline-formula> </named-content> saturable absorber topological crystalline insulator pulse laser |
| title | Multi-Wavelength Pulse Generation Using Narrow-Gap Topological Crystalline Insulator Pb<sub>1-X</sub>Sn<sub>X</sub>Te |
| title_full | Multi-Wavelength Pulse Generation Using Narrow-Gap Topological Crystalline Insulator Pb<sub>1-X</sub>Sn<sub>X</sub>Te |
| title_fullStr | Multi-Wavelength Pulse Generation Using Narrow-Gap Topological Crystalline Insulator Pb<sub>1-X</sub>Sn<sub>X</sub>Te |
| title_full_unstemmed | Multi-Wavelength Pulse Generation Using Narrow-Gap Topological Crystalline Insulator Pb<sub>1-X</sub>Sn<sub>X</sub>Te |
| title_short | Multi-Wavelength Pulse Generation Using Narrow-Gap Topological Crystalline Insulator Pb<sub>1-X</sub>Sn<sub>X</sub>Te |
| title_sort | multi wavelength pulse generation using narrow gap topological crystalline insulator pb sub 1 x sub sn sub x sub te |
| topic | Pb<named-content xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" content-type="math" xlink:type="simple"> <inline-formula> <tex-math notation="LaTeX">$_{1-X} Sn_{X}Te$</tex-math> </inline-formula> </named-content> saturable absorber topological crystalline insulator pulse laser |
| url | https://ieeexplore.ieee.org/document/10246977/ |
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