Studies of structural and optical properties of sputtered SiC thin films
The present study explored the deposition of amorphous silicon carbide (a-SiC) thin films on Si (100) and glass substrates using RF-magnetron sputtering. The sputtering power is changed from 100 to 250 W to study its influence on the characteristics of a-SiC thin films. Raman spectroscopy reveals th...
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| Format: | Article |
| Language: | English |
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Engineering Society for Corrosion, Belgrade
2024-06-01
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| Series: | Zaštita Materijala |
| Online Access: | https://www.zastita-materijala.org/index.php/home/article/view/1143 |
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| Summary: | The present study explored the deposition of amorphous silicon carbide (a-SiC) thin films on Si (100) and glass substrates using RF-magnetron sputtering. The sputtering power is changed from 100 to 250 W to study its influence on the characteristics of a-SiC thin films. Raman spectroscopy reveals the formation of a-SiC as well as carbon clusters. The film deposited at 100 W clearly shows the presence of both transverse optical (TO) and longitudinal optical (LO) phonon modes. The average roughness of the a-SiC films found to follow an increasing trend with increase in the sputtering power. The optical band gap of the a-SiC films measured by UV-Visible spectrophotometer was found to increase up to 2.45 eV with decrease in sputtering power. All a-SiC thin films were highly transparent. The Photoluminescence (PL) spectroscopy results were in agreement with the data observed by UV-Visible spectroscopy |
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| ISSN: | 0351-9465 2466-2585 |