Modeling and Analysis of KSnI<sub>3</sub> Perovskite Solar Cells Yielding Power Conversion Efficiency of 30.21%
KSnI<sub>3</sub>-based perovskite solar cells have attracted a lot of research interest due their unique electronic, optical, and thermal properties. In this study, we optimized the performance of various lead-free perovskite solar cell structures—specifically, FTO/Al–ZnO/KSnI<sub>...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-04-01
|
| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/15/8/580 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | KSnI<sub>3</sub>-based perovskite solar cells have attracted a lot of research interest due their unique electronic, optical, and thermal properties. In this study, we optimized the performance of various lead-free perovskite solar cell structures—specifically, FTO/Al–ZnO/KSnI<sub>3</sub>/rGO/Se, FTO/LiTiO<sub>2</sub>/KSnI<sub>3</sub>/rGO/Se, FTO/ZnO/KSnI<sub>3</sub>/rGO/Se, and FTO/SnO<sub>2</sub>/KSnI<sub>3</sub>/rGO/Se, using the SCAPS-1D simulation tool. The optimization focused on the thicknesses and dopant densities of the rGO, KSnI<sub>3</sub>, Al–ZnO, LiTiO<sub>2</sub>, ZnO, and SnO<sub>2</sub> layers, the thickness of the FTO electrode, as well as the defect density of KSnI<sub>3</sub>. This yielded PCE values of 27.60%, 24.94%, 27.62%, and 30.21% for the FTO/Al–ZnO/KSnI<sub>3</sub>/rGO/Se, FTO/LiTiO<sub>2</sub>/KSnI<sub>3</sub>/rGO/Se, FTO/ZnO/KSnI<sub>3</sub>/rGO/Se, and FTO/SnO<sub>2</sub>/KSnI<sub>3</sub>/rGO/Se perovskite solar cell configurations, respectively. The FTO/SnO<sub>2</sub>/KSnI<sub>3</sub>/rGO/Se device is 7.43% more efficient than the FTO/SnO<sub>2</sub>/3C-SiC/KSnI<sub>3</sub>/NiO/C device, which is currently the highest performing KSnI<sub>3</sub>-based perovskite solar cell in the literature. Thus, our FTO/SnO<sub>2</sub>/KSnI<sub>3</sub>/rGO/Se perovskite solar cell structure is now, by far, the most efficient PSC design. Its best performance is achieved under ideal conditions of a series resistance of 0.5 Ω cm<sup>2</sup>, a shunt resistance of 10<sup>7</sup> Ω cm<sup>2</sup>, and a temperature of 371 K. |
|---|---|
| ISSN: | 2079-4991 |