Modeling and Analysis of KSnI<sub>3</sub> Perovskite Solar Cells Yielding Power Conversion Efficiency of 30.21%

KSnI<sub>3</sub>-based perovskite solar cells have attracted a lot of research interest due their unique electronic, optical, and thermal properties. In this study, we optimized the performance of various lead-free perovskite solar cell structures—specifically, FTO/Al–ZnO/KSnI<sub>...

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Main Authors: Bonginkosi Vincent Kheswa, Siyabonga Ntokozo Thandoluhle Majola, Hmoud Al-Dmour, Nolufefe Muriel Ndzane, Lucky Makhathini
Format: Article
Language:English
Published: MDPI AG 2025-04-01
Series:Nanomaterials
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Online Access:https://www.mdpi.com/2079-4991/15/8/580
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Summary:KSnI<sub>3</sub>-based perovskite solar cells have attracted a lot of research interest due their unique electronic, optical, and thermal properties. In this study, we optimized the performance of various lead-free perovskite solar cell structures—specifically, FTO/Al–ZnO/KSnI<sub>3</sub>/rGO/Se, FTO/LiTiO<sub>2</sub>/KSnI<sub>3</sub>/rGO/Se, FTO/ZnO/KSnI<sub>3</sub>/rGO/Se, and FTO/SnO<sub>2</sub>/KSnI<sub>3</sub>/rGO/Se, using the SCAPS-1D simulation tool. The optimization focused on the thicknesses and dopant densities of the rGO, KSnI<sub>3</sub>, Al–ZnO, LiTiO<sub>2</sub>, ZnO, and SnO<sub>2</sub> layers, the thickness of the FTO electrode, as well as the defect density of KSnI<sub>3</sub>. This yielded PCE values of 27.60%, 24.94%, 27.62%, and 30.21% for the FTO/Al–ZnO/KSnI<sub>3</sub>/rGO/Se, FTO/LiTiO<sub>2</sub>/KSnI<sub>3</sub>/rGO/Se, FTO/ZnO/KSnI<sub>3</sub>/rGO/Se, and FTO/SnO<sub>2</sub>/KSnI<sub>3</sub>/rGO/Se perovskite solar cell configurations, respectively. The FTO/SnO<sub>2</sub>/KSnI<sub>3</sub>/rGO/Se device is 7.43% more efficient than the FTO/SnO<sub>2</sub>/3C-SiC/KSnI<sub>3</sub>/NiO/C device, which is currently the highest performing KSnI<sub>3</sub>-based perovskite solar cell in the literature. Thus, our FTO/SnO<sub>2</sub>/KSnI<sub>3</sub>/rGO/Se perovskite solar cell structure is now, by far, the most efficient PSC design. Its best performance is achieved under ideal conditions of a series resistance of 0.5 Ω cm<sup>2</sup>, a shunt resistance of 10<sup>7</sup> Ω cm<sup>2</sup>, and a temperature of 371 K.
ISSN:2079-4991