Cutting Indium Usage by 60% in SHJ-Modules Maintaining High Efficiency
In this work the impact of reducing the Indium consumption for SHJ cells and modules is investigated. Optical simulations show that thinner Indium Tin Oxide (ITO) layers can be used on module level with minor reflection losses while on cell level losses are more severe. For extremely thin ITO layer...
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TIB Open Publishing
2024-12-01
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| Series: | SiliconPV Conference Proceedings |
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| Online Access: | https://www.tib-op.org/ojs/index.php/siliconpv/article/view/1323 |
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| author | Sebastian Pingel Ioan Voicu Vulcanean Charlotte Röhnelt Winfried Wolke Vasileios Georgiou-Sarlikiotis Alexander Krieg Martin Bivour Anamaria Steinmetz |
| author_facet | Sebastian Pingel Ioan Voicu Vulcanean Charlotte Röhnelt Winfried Wolke Vasileios Georgiou-Sarlikiotis Alexander Krieg Martin Bivour Anamaria Steinmetz |
| author_sort | Sebastian Pingel |
| collection | DOAJ |
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In this work the impact of reducing the Indium consumption for SHJ cells and modules is investigated. Optical simulations show that thinner Indium Tin Oxide (ITO) layers can be used on module level with minor reflection losses while on cell level losses are more severe. For extremely thin ITO layers with a thickness of 7-28 nm on texture a dielectric layer is necessary to maintain / improve the JSC level on both cell and module levels. Results (i) on solar cells (Transfer Length Method - TLM) for lateral resistance and (ii) on shunt structures for vertical electrical resistance showed that there is significant improvement potential if the doping of the layers is adapted parallel to thickness reduction. Solar cell samples with 60% reduced ITO layer thickness on front and rear sides show a similar series resistance level as the 70 nm reference but lower JSC. Optical simulation showed that module integration will recover most of the lost JSC resulting in an expected 0.5%abs. efficiency loss for samples with total (front & rear side) 60% less Indium without adding any process steps. Applying an additional dielectric film enables 80% Indium reduction on the front side with JSC gain on cell level and similar JSC on module level compared to the ITO with reference thickness.
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| format | Article |
| id | doaj-art-971115069f064c62883b0902851c44f2 |
| institution | OA Journals |
| issn | 2940-2123 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | TIB Open Publishing |
| record_format | Article |
| series | SiliconPV Conference Proceedings |
| spelling | doaj-art-971115069f064c62883b0902851c44f22025-08-20T02:34:36ZengTIB Open PublishingSiliconPV Conference Proceedings2940-21232024-12-01210.52825/siliconpv.v2i.1323Cutting Indium Usage by 60% in SHJ-Modules Maintaining High EfficiencySebastian Pingel0https://orcid.org/0000-0001-9552-8761Ioan Voicu Vulcanean1Charlotte Röhnelt2Winfried Wolke3Vasileios Georgiou-Sarlikiotis4Alexander Krieg5Martin Bivour6Anamaria Steinmetz7https://orcid.org/0000-0002-6517-9705Fraunhofer Institute for Solar Energy Systems Fraunhofer Institute for Solar Energy Systems Fraunhofer Institute for Solar Energy Systems Fraunhofer Institute for Solar Energy Systems Fraunhofer Institute for Solar Energy Systems Fraunhofer Institute for Solar Energy Systems Fraunhofer Institute for Solar Energy Systems Fraunhofer Institute for Solar Energy Systems In this work the impact of reducing the Indium consumption for SHJ cells and modules is investigated. Optical simulations show that thinner Indium Tin Oxide (ITO) layers can be used on module level with minor reflection losses while on cell level losses are more severe. For extremely thin ITO layers with a thickness of 7-28 nm on texture a dielectric layer is necessary to maintain / improve the JSC level on both cell and module levels. Results (i) on solar cells (Transfer Length Method - TLM) for lateral resistance and (ii) on shunt structures for vertical electrical resistance showed that there is significant improvement potential if the doping of the layers is adapted parallel to thickness reduction. Solar cell samples with 60% reduced ITO layer thickness on front and rear sides show a similar series resistance level as the 70 nm reference but lower JSC. Optical simulation showed that module integration will recover most of the lost JSC resulting in an expected 0.5%abs. efficiency loss for samples with total (front & rear side) 60% less Indium without adding any process steps. Applying an additional dielectric film enables 80% Indium reduction on the front side with JSC gain on cell level and similar JSC on module level compared to the ITO with reference thickness. https://www.tib-op.org/ojs/index.php/siliconpv/article/view/1323Silicon HeterojunctionIndiumTransparent Conductive Oxide |
| spellingShingle | Sebastian Pingel Ioan Voicu Vulcanean Charlotte Röhnelt Winfried Wolke Vasileios Georgiou-Sarlikiotis Alexander Krieg Martin Bivour Anamaria Steinmetz Cutting Indium Usage by 60% in SHJ-Modules Maintaining High Efficiency SiliconPV Conference Proceedings Silicon Heterojunction Indium Transparent Conductive Oxide |
| title | Cutting Indium Usage by 60% in SHJ-Modules Maintaining High Efficiency |
| title_full | Cutting Indium Usage by 60% in SHJ-Modules Maintaining High Efficiency |
| title_fullStr | Cutting Indium Usage by 60% in SHJ-Modules Maintaining High Efficiency |
| title_full_unstemmed | Cutting Indium Usage by 60% in SHJ-Modules Maintaining High Efficiency |
| title_short | Cutting Indium Usage by 60% in SHJ-Modules Maintaining High Efficiency |
| title_sort | cutting indium usage by 60 in shj modules maintaining high efficiency |
| topic | Silicon Heterojunction Indium Transparent Conductive Oxide |
| url | https://www.tib-op.org/ojs/index.php/siliconpv/article/view/1323 |
| work_keys_str_mv | AT sebastianpingel cuttingindiumusageby60inshjmodulesmaintaininghighefficiency AT ioanvoicuvulcanean cuttingindiumusageby60inshjmodulesmaintaininghighefficiency AT charlotterohnelt cuttingindiumusageby60inshjmodulesmaintaininghighefficiency AT winfriedwolke cuttingindiumusageby60inshjmodulesmaintaininghighefficiency AT vasileiosgeorgiousarlikiotis cuttingindiumusageby60inshjmodulesmaintaininghighefficiency AT alexanderkrieg cuttingindiumusageby60inshjmodulesmaintaininghighefficiency AT martinbivour cuttingindiumusageby60inshjmodulesmaintaininghighefficiency AT anamariasteinmetz cuttingindiumusageby60inshjmodulesmaintaininghighefficiency |