Room‐Temperature Blackbody‐Sensitive Photodetector with Visible‐To‐Long‐Wavelength‐Infrared Photoresponse and Ultrafast Speed Based on a Te/PtSe2 Heterostructure
Abstract Room‐temperature blackbody‐sensitive infrared photodetectors with ultra‐broadband and ultrafast photoresponses are highly desired in numerous scientific and technical fields. However, it is challenging for an infrared photodetector to simultaneously possess all the aforementioned characteri...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-02-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400268 |
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| author | Zhiyuan Dai Yu Yu Haibiao Guan Ruowen Wang Tao Ye Yonghao Bu Jie Deng Mengdie Shi Rui Xin Tianxin Li Haibo Shu Xiaoshuang Chen Jing Zhou |
| author_facet | Zhiyuan Dai Yu Yu Haibiao Guan Ruowen Wang Tao Ye Yonghao Bu Jie Deng Mengdie Shi Rui Xin Tianxin Li Haibo Shu Xiaoshuang Chen Jing Zhou |
| author_sort | Zhiyuan Dai |
| collection | DOAJ |
| description | Abstract Room‐temperature blackbody‐sensitive infrared photodetectors with ultra‐broadband and ultrafast photoresponses are highly desired in numerous scientific and technical fields. However, it is challenging for an infrared photodetector to simultaneously possess all the aforementioned characteristics. In this study, a room‐temperature Te/PtSe2 heterostructure photodetector is established to address this challenge, utilizing the built‐in field of the heterostructure, the crossing conduction and valence bands of PtSe2, the high mobilities of both materials, and a considerable photogain. The device is photoresponsive over the ultrabroad wavelength range (519 nm–10 µm). The peak responsivity and specific detectivity reach 196.8 A W−1, and 4.3 × 109 cm Hz1/2 W−1, respectively, at the wavelength of 3.32 µm. The device also exhibits blackbody sensitivity, with a responsivity of 24.8 A W−1, and a specific detectivity of 7.4 × 108 cm Hz1/2 W−1. The photoresponse is ultrafast, corresponding to a 3 dB bandwidth of 160 kHz. The study provides new possibilities for high‐performance room‐temperature infrared detection. |
| format | Article |
| id | doaj-art-96d2bf0afbe4473cacf27cbfa95580f7 |
| institution | Kabale University |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-96d2bf0afbe4473cacf27cbfa95580f72025-08-20T03:47:49ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-02-01112n/an/a10.1002/aelm.202400268Room‐Temperature Blackbody‐Sensitive Photodetector with Visible‐To‐Long‐Wavelength‐Infrared Photoresponse and Ultrafast Speed Based on a Te/PtSe2 HeterostructureZhiyuan Dai0Yu Yu1Haibiao Guan2Ruowen Wang3Tao Ye4Yonghao Bu5Jie Deng6Mengdie Shi7Rui Xin8Tianxin Li9Haibo Shu10Xiaoshuang Chen11Jing Zhou12State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 P. R. ChinaState Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 P. R. ChinaCollege of Optical and Electronic Technology China Jiliang University Hangzhou 310018 P. R. ChinaState Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 P. R. ChinaState Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 P. R. ChinaState Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 P. R. ChinaState Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 P. R. ChinaState Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 P. R. ChinaState Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 P. R. ChinaState Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 P. R. ChinaCollege of Optical and Electronic Technology China Jiliang University Hangzhou 310018 P. R. ChinaState Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 P. R. ChinaState Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 P. R. ChinaAbstract Room‐temperature blackbody‐sensitive infrared photodetectors with ultra‐broadband and ultrafast photoresponses are highly desired in numerous scientific and technical fields. However, it is challenging for an infrared photodetector to simultaneously possess all the aforementioned characteristics. In this study, a room‐temperature Te/PtSe2 heterostructure photodetector is established to address this challenge, utilizing the built‐in field of the heterostructure, the crossing conduction and valence bands of PtSe2, the high mobilities of both materials, and a considerable photogain. The device is photoresponsive over the ultrabroad wavelength range (519 nm–10 µm). The peak responsivity and specific detectivity reach 196.8 A W−1, and 4.3 × 109 cm Hz1/2 W−1, respectively, at the wavelength of 3.32 µm. The device also exhibits blackbody sensitivity, with a responsivity of 24.8 A W−1, and a specific detectivity of 7.4 × 108 cm Hz1/2 W−1. The photoresponse is ultrafast, corresponding to a 3 dB bandwidth of 160 kHz. The study provides new possibilities for high‐performance room‐temperature infrared detection.https://doi.org/10.1002/aelm.202400268broadband Infrared detectionhigh gain‐bandwidth productroom‐temperature blackbody‐sensitiveTe/PtSe2ultra‐fast response speed |
| spellingShingle | Zhiyuan Dai Yu Yu Haibiao Guan Ruowen Wang Tao Ye Yonghao Bu Jie Deng Mengdie Shi Rui Xin Tianxin Li Haibo Shu Xiaoshuang Chen Jing Zhou Room‐Temperature Blackbody‐Sensitive Photodetector with Visible‐To‐Long‐Wavelength‐Infrared Photoresponse and Ultrafast Speed Based on a Te/PtSe2 Heterostructure Advanced Electronic Materials broadband Infrared detection high gain‐bandwidth product room‐temperature blackbody‐sensitive Te/PtSe2 ultra‐fast response speed |
| title | Room‐Temperature Blackbody‐Sensitive Photodetector with Visible‐To‐Long‐Wavelength‐Infrared Photoresponse and Ultrafast Speed Based on a Te/PtSe2 Heterostructure |
| title_full | Room‐Temperature Blackbody‐Sensitive Photodetector with Visible‐To‐Long‐Wavelength‐Infrared Photoresponse and Ultrafast Speed Based on a Te/PtSe2 Heterostructure |
| title_fullStr | Room‐Temperature Blackbody‐Sensitive Photodetector with Visible‐To‐Long‐Wavelength‐Infrared Photoresponse and Ultrafast Speed Based on a Te/PtSe2 Heterostructure |
| title_full_unstemmed | Room‐Temperature Blackbody‐Sensitive Photodetector with Visible‐To‐Long‐Wavelength‐Infrared Photoresponse and Ultrafast Speed Based on a Te/PtSe2 Heterostructure |
| title_short | Room‐Temperature Blackbody‐Sensitive Photodetector with Visible‐To‐Long‐Wavelength‐Infrared Photoresponse and Ultrafast Speed Based on a Te/PtSe2 Heterostructure |
| title_sort | room temperature blackbody sensitive photodetector with visible to long wavelength infrared photoresponse and ultrafast speed based on a te ptse2 heterostructure |
| topic | broadband Infrared detection high gain‐bandwidth product room‐temperature blackbody‐sensitive Te/PtSe2 ultra‐fast response speed |
| url | https://doi.org/10.1002/aelm.202400268 |
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