Dual-Band Topological Valley Cavity in Mid-Infrared Range

Topological edge states, emerging at boundaries between regions with distinct topological properties, enable unidirectional transmission with robustness against defects and disorder. However, achieving dual-band operation with high performance remains challenging. Here, we integrate dual-band topolo...

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Main Authors: Chen Kang, Jinling Yu, Can Chen, Yunfeng Lai, Shuying Cheng, Yonghai Chen, Yuan Li, Shuman Liu, Jinchuan Zhang, Fengqi Liu
Format: Article
Language:English
Published: MDPI AG 2025-04-01
Series:Photonics
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Online Access:https://www.mdpi.com/2304-6732/12/5/420
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author Chen Kang
Jinling Yu
Can Chen
Yunfeng Lai
Shuying Cheng
Yonghai Chen
Yuan Li
Shuman Liu
Jinchuan Zhang
Fengqi Liu
author_facet Chen Kang
Jinling Yu
Can Chen
Yunfeng Lai
Shuying Cheng
Yonghai Chen
Yuan Li
Shuman Liu
Jinchuan Zhang
Fengqi Liu
author_sort Chen Kang
collection DOAJ
description Topological edge states, emerging at boundaries between regions with distinct topological properties, enable unidirectional transmission with robustness against defects and disorder. However, achieving dual-band operation with high performance remains challenging. Here, we integrate dual-band topological edge states into a valley photonic crystal cavity operating in the mid-infrared region, leveraging triangular scatterers. A key contribution of this work is the simultaneous realization of ultra-high Q-factors (up to 6.1593 × 10<sup>9</sup>) and uniform mode distribution (inverse participation ratio < 2) across both bands. Moreover, the dual-band cavity exhibits exceptional defect tolerance. These findings provide a promising platform for mid-infrared photonic integration, paving the way for high-performance optical cavities in multifunctional photonic systems.
format Article
id doaj-art-96588dd48e594695a5b2dc57ade7f873
institution Kabale University
issn 2304-6732
language English
publishDate 2025-04-01
publisher MDPI AG
record_format Article
series Photonics
spelling doaj-art-96588dd48e594695a5b2dc57ade7f8732025-08-20T03:48:02ZengMDPI AGPhotonics2304-67322025-04-0112542010.3390/photonics12050420Dual-Band Topological Valley Cavity in Mid-Infrared RangeChen Kang0Jinling Yu1Can Chen2Yunfeng Lai3Shuying Cheng4Yonghai Chen5Yuan Li6Shuman Liu7Jinchuan Zhang8Fengqi Liu9School of Advanced Manufacturing, Fuzhou University, Quanzhou 362251, ChinaSchool of Advanced Manufacturing, Fuzhou University, Quanzhou 362251, ChinaSchool of Advanced Manufacturing, Fuzhou University, Quanzhou 362251, ChinaInstitute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, ChinaInstitute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, ChinaLaboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaLaboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaLaboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaLaboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaLaboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaTopological edge states, emerging at boundaries between regions with distinct topological properties, enable unidirectional transmission with robustness against defects and disorder. However, achieving dual-band operation with high performance remains challenging. Here, we integrate dual-band topological edge states into a valley photonic crystal cavity operating in the mid-infrared region, leveraging triangular scatterers. A key contribution of this work is the simultaneous realization of ultra-high Q-factors (up to 6.1593 × 10<sup>9</sup>) and uniform mode distribution (inverse participation ratio < 2) across both bands. Moreover, the dual-band cavity exhibits exceptional defect tolerance. These findings provide a promising platform for mid-infrared photonic integration, paving the way for high-performance optical cavities in multifunctional photonic systems.https://www.mdpi.com/2304-6732/12/5/420valley photonic crystalsmid-infrared rangetopological
spellingShingle Chen Kang
Jinling Yu
Can Chen
Yunfeng Lai
Shuying Cheng
Yonghai Chen
Yuan Li
Shuman Liu
Jinchuan Zhang
Fengqi Liu
Dual-Band Topological Valley Cavity in Mid-Infrared Range
Photonics
valley photonic crystals
mid-infrared range
topological
title Dual-Band Topological Valley Cavity in Mid-Infrared Range
title_full Dual-Band Topological Valley Cavity in Mid-Infrared Range
title_fullStr Dual-Band Topological Valley Cavity in Mid-Infrared Range
title_full_unstemmed Dual-Band Topological Valley Cavity in Mid-Infrared Range
title_short Dual-Band Topological Valley Cavity in Mid-Infrared Range
title_sort dual band topological valley cavity in mid infrared range
topic valley photonic crystals
mid-infrared range
topological
url https://www.mdpi.com/2304-6732/12/5/420
work_keys_str_mv AT chenkang dualbandtopologicalvalleycavityinmidinfraredrange
AT jinlingyu dualbandtopologicalvalleycavityinmidinfraredrange
AT canchen dualbandtopologicalvalleycavityinmidinfraredrange
AT yunfenglai dualbandtopologicalvalleycavityinmidinfraredrange
AT shuyingcheng dualbandtopologicalvalleycavityinmidinfraredrange
AT yonghaichen dualbandtopologicalvalleycavityinmidinfraredrange
AT yuanli dualbandtopologicalvalleycavityinmidinfraredrange
AT shumanliu dualbandtopologicalvalleycavityinmidinfraredrange
AT jinchuanzhang dualbandtopologicalvalleycavityinmidinfraredrange
AT fengqiliu dualbandtopologicalvalleycavityinmidinfraredrange