Low dielectric loss in vanadium-based zircon ceramics via high-entropy strategy

Zircon ceramics have potential applications in next-generation wireless communication because of their low permittivity and adjustable temperature coefficient at microwave frequencies. However, the vast challenge of realizing ultralow dielectric loss still exists. Here, we propose a high-entropy str...

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Main Authors: Yuheng Zhang, Huaicheng Xiang, Xiaoyu Wu, Yang Zhou, Ying Tang, Liang Fang
Format: Article
Language:English
Published: Tsinghua University Press 2025-01-01
Series:Journal of Advanced Ceramics
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Online Access:https://www.sciopen.com/article/10.26599/JAC.2024.9221012
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author Yuheng Zhang
Huaicheng Xiang
Xiaoyu Wu
Yang Zhou
Ying Tang
Liang Fang
author_facet Yuheng Zhang
Huaicheng Xiang
Xiaoyu Wu
Yang Zhou
Ying Tang
Liang Fang
author_sort Yuheng Zhang
collection DOAJ
description Zircon ceramics have potential applications in next-generation wireless communication because of their low permittivity and adjustable temperature coefficient at microwave frequencies. However, the vast challenge of realizing ultralow dielectric loss still exists. Here, we propose a high-entropy strategy to enhance the bonding of the A-site dodecahedron in zircon and design (Nd0.2Eu0.2Y0.2Ho0.2Yb0.2)VO4 ceramics with a high quality factor (high Q × f, that is, low dielectric loss). The (Nd0.2Eu0.2Y0.2Ho0.2Yb0.2)VO4 high-entropy ceramics, which belong to the tetragonal zircon structure with the I41/amd space group, exhibit a low relative permittivity (εr = 11.55), a negative temperature coefficient of resonant frequency (τf = −37.3 ppm/°C), and a high Q × f of 76,400 GHz (at 12.31 GHz). The high Q × f value can be attributed to the high chemical bond strength and structural stability. Furthermore, the relationship between the crystal structure and the microwave dielectric properties of (Nd0.2Eu0.2Y0.2Ho0.2Yb0.2)VO4 high-entropy ceramics was analyzed through high resolution transmission electron microscopy (HRTEM), Raman spectroscopy, far-infrared reflection spectroscopy, and chemical bond theory. This work provides an effective avenue for designing microwave dielectric materials with low loss to meet the demands of passive components.
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issn 2226-4108
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series Journal of Advanced Ceramics
spelling doaj-art-964ca6cd1558424c9ebe0a94fb3212e92025-01-24T07:52:15ZengTsinghua University PressJournal of Advanced Ceramics2226-41082227-85082025-01-01141922101210.26599/JAC.2024.9221012Low dielectric loss in vanadium-based zircon ceramics via high-entropy strategyYuheng Zhang0Huaicheng Xiang1Xiaoyu Wu2Yang Zhou3Ying Tang4Liang Fang5College of Physics and Electronic Information Engineering, Guilin University of Technology, Guilin 541004, ChinaCollege of Physics and Electronic Information Engineering, Guilin University of Technology, Guilin 541004, ChinaCollege of Physics and Electronic Information Engineering, Guilin University of Technology, Guilin 541004, ChinaCollege of Physics and Electronic Information Engineering, Guilin University of Technology, Guilin 541004, ChinaCollege of Physics and Electronic Information Engineering, Guilin University of Technology, Guilin 541004, ChinaGuangxi Universities Key Laboratory of Non-Ferrous Metal Oxide Electronic Functional Materials and Devices, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, ChinaZircon ceramics have potential applications in next-generation wireless communication because of their low permittivity and adjustable temperature coefficient at microwave frequencies. However, the vast challenge of realizing ultralow dielectric loss still exists. Here, we propose a high-entropy strategy to enhance the bonding of the A-site dodecahedron in zircon and design (Nd0.2Eu0.2Y0.2Ho0.2Yb0.2)VO4 ceramics with a high quality factor (high Q × f, that is, low dielectric loss). The (Nd0.2Eu0.2Y0.2Ho0.2Yb0.2)VO4 high-entropy ceramics, which belong to the tetragonal zircon structure with the I41/amd space group, exhibit a low relative permittivity (εr = 11.55), a negative temperature coefficient of resonant frequency (τf = −37.3 ppm/°C), and a high Q × f of 76,400 GHz (at 12.31 GHz). The high Q × f value can be attributed to the high chemical bond strength and structural stability. Furthermore, the relationship between the crystal structure and the microwave dielectric properties of (Nd0.2Eu0.2Y0.2Ho0.2Yb0.2)VO4 high-entropy ceramics was analyzed through high resolution transmission electron microscopy (HRTEM), Raman spectroscopy, far-infrared reflection spectroscopy, and chemical bond theory. This work provides an effective avenue for designing microwave dielectric materials with low loss to meet the demands of passive components.https://www.sciopen.com/article/10.26599/JAC.2024.9221012high-entropy ceramicsvanadium-based zirconmicrowave dielectric propertieslow dielectric losschemical bond characteristics
spellingShingle Yuheng Zhang
Huaicheng Xiang
Xiaoyu Wu
Yang Zhou
Ying Tang
Liang Fang
Low dielectric loss in vanadium-based zircon ceramics via high-entropy strategy
Journal of Advanced Ceramics
high-entropy ceramics
vanadium-based zircon
microwave dielectric properties
low dielectric loss
chemical bond characteristics
title Low dielectric loss in vanadium-based zircon ceramics via high-entropy strategy
title_full Low dielectric loss in vanadium-based zircon ceramics via high-entropy strategy
title_fullStr Low dielectric loss in vanadium-based zircon ceramics via high-entropy strategy
title_full_unstemmed Low dielectric loss in vanadium-based zircon ceramics via high-entropy strategy
title_short Low dielectric loss in vanadium-based zircon ceramics via high-entropy strategy
title_sort low dielectric loss in vanadium based zircon ceramics via high entropy strategy
topic high-entropy ceramics
vanadium-based zircon
microwave dielectric properties
low dielectric loss
chemical bond characteristics
url https://www.sciopen.com/article/10.26599/JAC.2024.9221012
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AT xiaoyuwu lowdielectriclossinvanadiumbasedzirconceramicsviahighentropystrategy
AT yangzhou lowdielectriclossinvanadiumbasedzirconceramicsviahighentropystrategy
AT yingtang lowdielectriclossinvanadiumbasedzirconceramicsviahighentropystrategy
AT liangfang lowdielectriclossinvanadiumbasedzirconceramicsviahighentropystrategy