Characterization of deep-level defects in OFZ grown Nb-doped β-Ga2O3 single crystals

Characterization of deep-level defects in OFZ grown Nb-doped β-Ga2O3 single crystals

This work explores niobium (Nb) as an n-type dopant in β-Ga2O3 substrates and examines potential defect states formed in single crystals grown using the optical floating zone (OFZ) technique. Crystals with 0.05 and 0.1 mol. % Nb source doping were analyzed, with x-ray diffraction (XRD) confirming a...

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Bibliographic Details
Main Authors: Ananthu Vijayan V L, Christopher A. Dawe, Sai Charan Vanjari, Vladimir P. Markevich, Matthew P. Halsall, Anthony R. Peaker, Moorthy Babu Sridharan, Martin Kuball
Format: Article
Language:English
Published: AIP Publishing LLC 2025-05-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/5.0261436
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