Device Modeling of the Performance of Cu(In,Ga)Se2 Solar Cells with V-Shaped Bandgap Profiles
The effect of Cu(In,Ga)Se2 (CIGS) with V-shaped bandgap on device performance is investigated in detail. A series of Ga/(In+Ga) ratio are set to study the influence of V-shaped bandgap profile on the electricity of CIGS thin film solar cells. The modeling of device current density-voltage (J-V) curv...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2014-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2014/186579 |
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| author | Shou-Yi Kuo Ming-Yang Hsieh Dan-Hua Hsieh Hao-Chung Kuo Chyong-Hua Chen Fang-I Lai |
| author_facet | Shou-Yi Kuo Ming-Yang Hsieh Dan-Hua Hsieh Hao-Chung Kuo Chyong-Hua Chen Fang-I Lai |
| author_sort | Shou-Yi Kuo |
| collection | DOAJ |
| description | The effect of Cu(In,Ga)Se2 (CIGS) with V-shaped bandgap on device performance is investigated in detail. A series of Ga/(In+Ga) ratio are set to study the influence of V-shaped bandgap profile on the electricity of CIGS thin film solar cells. The modeling of device current density-voltage (J-V) curve and bandgap grading profile corresponded well to measurement results. Detailed characteristic and modeling results show that an increased gradient of bandgap from valley to the buffer layer CdS will result in a barrier and lead to an enhanced recombination in the valley. This phenomenon can be modified by the back electric field resulting from a gradient bandgap from valley (bandgap minimum) to the Mo back contact. These results indicate CIGS-based solar cells can achieve higher performance by optimizing the V-shaped bandgap profile. |
| format | Article |
| id | doaj-art-959b606cbef04439a2a5a657027a70e1 |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-959b606cbef04439a2a5a657027a70e12025-02-03T01:30:39ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2014-01-01201410.1155/2014/186579186579Device Modeling of the Performance of Cu(In,Ga)Se2 Solar Cells with V-Shaped Bandgap ProfilesShou-Yi Kuo0Ming-Yang Hsieh1Dan-Hua Hsieh2Hao-Chung Kuo3Chyong-Hua Chen4Fang-I Lai5Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Taoyuan 333, TaiwanDepartment of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Taoyuan 333, TaiwanDepartment of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, 1001 Ta Hsueh Road, Hsinchu 30013, TaiwanDepartment of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, 1001 Ta Hsueh Road, Hsinchu 30013, TaiwanDepartment of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, 1001 Ta Hsueh Road, Hsinchu 30013, TaiwanDepartment of Photonics Engineering, Yuan-Ze University, 135 Yuan-Tung Road, Chung-Li 32003, TaiwanThe effect of Cu(In,Ga)Se2 (CIGS) with V-shaped bandgap on device performance is investigated in detail. A series of Ga/(In+Ga) ratio are set to study the influence of V-shaped bandgap profile on the electricity of CIGS thin film solar cells. The modeling of device current density-voltage (J-V) curve and bandgap grading profile corresponded well to measurement results. Detailed characteristic and modeling results show that an increased gradient of bandgap from valley to the buffer layer CdS will result in a barrier and lead to an enhanced recombination in the valley. This phenomenon can be modified by the back electric field resulting from a gradient bandgap from valley (bandgap minimum) to the Mo back contact. These results indicate CIGS-based solar cells can achieve higher performance by optimizing the V-shaped bandgap profile.http://dx.doi.org/10.1155/2014/186579 |
| spellingShingle | Shou-Yi Kuo Ming-Yang Hsieh Dan-Hua Hsieh Hao-Chung Kuo Chyong-Hua Chen Fang-I Lai Device Modeling of the Performance of Cu(In,Ga)Se2 Solar Cells with V-Shaped Bandgap Profiles International Journal of Photoenergy |
| title | Device Modeling of the Performance of Cu(In,Ga)Se2 Solar Cells with V-Shaped Bandgap Profiles |
| title_full | Device Modeling of the Performance of Cu(In,Ga)Se2 Solar Cells with V-Shaped Bandgap Profiles |
| title_fullStr | Device Modeling of the Performance of Cu(In,Ga)Se2 Solar Cells with V-Shaped Bandgap Profiles |
| title_full_unstemmed | Device Modeling of the Performance of Cu(In,Ga)Se2 Solar Cells with V-Shaped Bandgap Profiles |
| title_short | Device Modeling of the Performance of Cu(In,Ga)Se2 Solar Cells with V-Shaped Bandgap Profiles |
| title_sort | device modeling of the performance of cu in ga se2 solar cells with v shaped bandgap profiles |
| url | http://dx.doi.org/10.1155/2014/186579 |
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