Self-Heating Effects in RF Region of FDSOI MOSFETs at Cryogenic Temperatures
Radio-frequency (RF) circuits are crucial to qubit manipulation, for which transistor self-heating effects may influence performance and possibly change the quantum state. This paper presents an analytical RF model of FDSOI MOSFETs considering dynamic self-heating effects down to 3.3 K for the first...
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| Format: | Article |
| Language: | English |
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IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10970722/ |
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| author | Hung-Chi Han Edoardo Charbon Christian Enz |
| author_facet | Hung-Chi Han Edoardo Charbon Christian Enz |
| author_sort | Hung-Chi Han |
| collection | DOAJ |
| description | Radio-frequency (RF) circuits are crucial to qubit manipulation, for which transistor self-heating effects may influence performance and possibly change the quantum state. This paper presents an analytical RF model of FDSOI MOSFETs considering dynamic self-heating effects down to 3.3 K for the first time. Parameter extraction involves analytical calculation and optimization using the iteratively re-weighted least squares (IRLS) and Monte Carlo methods. The temperature rise is estimated by capturing the correlation between thermal resistance and device temperature. This work provides a method for modeling FDSOI RF performance and for analyzing dynamic self-heating effects at cryogenic temperatures. |
| format | Article |
| id | doaj-art-9582b7b7fbef4ee69c951d259e0b74a6 |
| institution | OA Journals |
| issn | 2168-6734 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-9582b7b7fbef4ee69c951d259e0b74a62025-08-20T02:14:54ZengIEEEIEEE Journal of the Electron Devices Society2168-67342025-01-011339640510.1109/JEDS.2025.356275210970722Self-Heating Effects in RF Region of FDSOI MOSFETs at Cryogenic TemperaturesHung-Chi Han0https://orcid.org/0000-0001-9900-5618Edoardo Charbon1https://orcid.org/0000-0002-0620-3365Christian Enz2https://orcid.org/0000-0002-9968-5278AQUA Lab, Ecole Polytechnique Fédérale de Lausanne, Institute of Electrical and Micro Engineering, Neuchâtel, SwitzerlandAQUA Lab, Ecole Polytechnique Fédérale de Lausanne, Institute of Electrical and Micro Engineering, Neuchâtel, SwitzerlandAQUA Lab, Ecole Polytechnique Fédérale de Lausanne, Institute of Electrical and Micro Engineering, Neuchâtel, SwitzerlandRadio-frequency (RF) circuits are crucial to qubit manipulation, for which transistor self-heating effects may influence performance and possibly change the quantum state. This paper presents an analytical RF model of FDSOI MOSFETs considering dynamic self-heating effects down to 3.3 K for the first time. Parameter extraction involves analytical calculation and optimization using the iteratively re-weighted least squares (IRLS) and Monte Carlo methods. The temperature rise is estimated by capturing the correlation between thermal resistance and device temperature. This work provides a method for modeling FDSOI RF performance and for analyzing dynamic self-heating effects at cryogenic temperatures.https://ieeexplore.ieee.org/document/10970722/Automated extractiondouble-gateFDSOIMOSFETmodelingradio frequency |
| spellingShingle | Hung-Chi Han Edoardo Charbon Christian Enz Self-Heating Effects in RF Region of FDSOI MOSFETs at Cryogenic Temperatures IEEE Journal of the Electron Devices Society Automated extraction double-gate FDSOI MOSFET modeling radio frequency |
| title | Self-Heating Effects in RF Region of FDSOI MOSFETs at Cryogenic Temperatures |
| title_full | Self-Heating Effects in RF Region of FDSOI MOSFETs at Cryogenic Temperatures |
| title_fullStr | Self-Heating Effects in RF Region of FDSOI MOSFETs at Cryogenic Temperatures |
| title_full_unstemmed | Self-Heating Effects in RF Region of FDSOI MOSFETs at Cryogenic Temperatures |
| title_short | Self-Heating Effects in RF Region of FDSOI MOSFETs at Cryogenic Temperatures |
| title_sort | self heating effects in rf region of fdsoi mosfets at cryogenic temperatures |
| topic | Automated extraction double-gate FDSOI MOSFET modeling radio frequency |
| url | https://ieeexplore.ieee.org/document/10970722/ |
| work_keys_str_mv | AT hungchihan selfheatingeffectsinrfregionoffdsoimosfetsatcryogenictemperatures AT edoardocharbon selfheatingeffectsinrfregionoffdsoimosfetsatcryogenictemperatures AT christianenz selfheatingeffectsinrfregionoffdsoimosfetsatcryogenictemperatures |