Self-Heating Effects in RF Region of FDSOI MOSFETs at Cryogenic Temperatures
Radio-frequency (RF) circuits are crucial to qubit manipulation, for which transistor self-heating effects may influence performance and possibly change the quantum state. This paper presents an analytical RF model of FDSOI MOSFETs considering dynamic self-heating effects down to 3.3 K for the first...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10970722/ |
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| Summary: | Radio-frequency (RF) circuits are crucial to qubit manipulation, for which transistor self-heating effects may influence performance and possibly change the quantum state. This paper presents an analytical RF model of FDSOI MOSFETs considering dynamic self-heating effects down to 3.3 K for the first time. Parameter extraction involves analytical calculation and optimization using the iteratively re-weighted least squares (IRLS) and Monte Carlo methods. The temperature rise is estimated by capturing the correlation between thermal resistance and device temperature. This work provides a method for modeling FDSOI RF performance and for analyzing dynamic self-heating effects at cryogenic temperatures. |
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| ISSN: | 2168-6734 |