High-k HfO2 Based Metal-Oxide-Semiconductor Devices Using Silicon and Silicon Carbide Semiconductor
In this paper we have calculated the flatband capacitance (CFB) for high-k dielectric material hafnia oxide (HfO2) as an insulator and silicon carbide (SiC) as a semiconductor material for metal-oxide-semiconductor (MOS) devices. We simulate the capacitance-voltage (C-V) characteristics of the MOS d...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2011-01-01
|
| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%205/articles/jnep_2011_V3_N1(Part5)_0947-0955.pdf |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850210316804161536 |
|---|---|
| author | N.P. Maity A. Pandey S. Chakraborty M. Roy |
| author_facet | N.P. Maity A. Pandey S. Chakraborty M. Roy |
| author_sort | N.P. Maity |
| collection | DOAJ |
| description | In this paper we have calculated the flatband capacitance (CFB) for high-k dielectric material hafnia oxide (HfO2) as an insulator and silicon carbide (SiC) as a semiconductor material for metal-oxide-semiconductor (MOS) devices. We simulate the capacitance-voltage (C-V) characteristics of the MOS devices with ultrathin oxide using ATLAS, a commercially available TCAD tool from SILVACO. The tool has investigated the effect on C-V characteristics of different oxide thickness and doping concentration of SiO2 and HfO2 as insulators and Si and SiC as semiconductor based MOS devices. Excellent agreement was observed over a wide range of oxide thickness and substrate doping for the materials. The C-V characteristics of different polytype of SiC semiconductor also studied for n-type MOS devices. |
| format | Article |
| id | doaj-art-94b3cfa4578547199d08a8a11e793202 |
| institution | OA Journals |
| issn | 2077-6772 |
| language | English |
| publishDate | 2011-01-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-94b3cfa4578547199d08a8a11e7932022025-08-20T02:09:48ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722011-01-0131947955High-k HfO2 Based Metal-Oxide-Semiconductor Devices Using Silicon and Silicon Carbide SemiconductorN.P. MaityA. PandeyS. ChakrabortyM. RoyIn this paper we have calculated the flatband capacitance (CFB) for high-k dielectric material hafnia oxide (HfO2) as an insulator and silicon carbide (SiC) as a semiconductor material for metal-oxide-semiconductor (MOS) devices. We simulate the capacitance-voltage (C-V) characteristics of the MOS devices with ultrathin oxide using ATLAS, a commercially available TCAD tool from SILVACO. The tool has investigated the effect on C-V characteristics of different oxide thickness and doping concentration of SiO2 and HfO2 as insulators and Si and SiC as semiconductor based MOS devices. Excellent agreement was observed over a wide range of oxide thickness and substrate doping for the materials. The C-V characteristics of different polytype of SiC semiconductor also studied for n-type MOS devices.http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%205/articles/jnep_2011_V3_N1(Part5)_0947-0955.pdfC-V characteristicsHfO2MOSSilicon carbideFlatband capacitance. |
| spellingShingle | N.P. Maity A. Pandey S. Chakraborty M. Roy High-k HfO2 Based Metal-Oxide-Semiconductor Devices Using Silicon and Silicon Carbide Semiconductor Журнал нано- та електронної фізики C-V characteristics HfO2 MOS Silicon carbide Flatband capacitance. |
| title | High-k HfO2 Based Metal-Oxide-Semiconductor Devices Using Silicon and Silicon Carbide Semiconductor |
| title_full | High-k HfO2 Based Metal-Oxide-Semiconductor Devices Using Silicon and Silicon Carbide Semiconductor |
| title_fullStr | High-k HfO2 Based Metal-Oxide-Semiconductor Devices Using Silicon and Silicon Carbide Semiconductor |
| title_full_unstemmed | High-k HfO2 Based Metal-Oxide-Semiconductor Devices Using Silicon and Silicon Carbide Semiconductor |
| title_short | High-k HfO2 Based Metal-Oxide-Semiconductor Devices Using Silicon and Silicon Carbide Semiconductor |
| title_sort | high k hfo2 based metal oxide semiconductor devices using silicon and silicon carbide semiconductor |
| topic | C-V characteristics HfO2 MOS Silicon carbide Flatband capacitance. |
| url | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%205/articles/jnep_2011_V3_N1(Part5)_0947-0955.pdf |
| work_keys_str_mv | AT npmaity highkhfo2basedmetaloxidesemiconductordevicesusingsiliconandsiliconcarbidesemiconductor AT apandey highkhfo2basedmetaloxidesemiconductordevicesusingsiliconandsiliconcarbidesemiconductor AT schakraborty highkhfo2basedmetaloxidesemiconductordevicesusingsiliconandsiliconcarbidesemiconductor AT mroy highkhfo2basedmetaloxidesemiconductordevicesusingsiliconandsiliconcarbidesemiconductor |