High-k HfO2 Based Metal-Oxide-Semiconductor Devices Using Silicon and Silicon Carbide Semiconductor
In this paper we have calculated the flatband capacitance (CFB) for high-k dielectric material hafnia oxide (HfO2) as an insulator and silicon carbide (SiC) as a semiconductor material for metal-oxide-semiconductor (MOS) devices. We simulate the capacitance-voltage (C-V) characteristics of the MOS d...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2011-01-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%205/articles/jnep_2011_V3_N1(Part5)_0947-0955.pdf |
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| Summary: | In this paper we have calculated the flatband capacitance (CFB) for high-k dielectric material hafnia oxide (HfO2) as an insulator and silicon carbide (SiC) as a semiconductor material for metal-oxide-semiconductor (MOS) devices. We simulate the capacitance-voltage (C-V) characteristics of the MOS devices with ultrathin oxide using ATLAS, a commercially available TCAD tool from SILVACO. The tool has investigated the effect on C-V characteristics of different oxide thickness and doping concentration of SiO2 and HfO2 as insulators and Si and SiC as semiconductor based MOS devices. Excellent agreement was observed over a wide range of oxide thickness and substrate doping for the materials. The C-V characteristics of different polytype of SiC semiconductor also studied for n-type MOS devices. |
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| ISSN: | 2077-6772 |