Surface passivation engineering for stable optoelectronic devices via hydroxyl-free ZnMgO nanoparticles
Abstract ZnMgO nanoparticles (ZMO NPs) are widely used as electron transport layers in optoelectronic devices such as light-emitting diodes (LEDs) and photodiodes (PDs) primarily because of their facile synthesis and excellent electron transport properties. However, the surface hydroxyl groups (‒OH)...
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| Format: | Article |
| Language: | English |
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SpringerOpen
2025-06-01
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| Series: | Nano Convergence |
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| Online Access: | https://doi.org/10.1186/s40580-025-00493-2 |
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| author | Seongkeun Oh Jaehwi Choi Junhyeok Park Young Kyun Choi Taesung Park Awais Ali Junhyuk Ahn Jiwan Kim Soong Ju Oh |
| author_facet | Seongkeun Oh Jaehwi Choi Junhyeok Park Young Kyun Choi Taesung Park Awais Ali Junhyuk Ahn Jiwan Kim Soong Ju Oh |
| author_sort | Seongkeun Oh |
| collection | DOAJ |
| description | Abstract ZnMgO nanoparticles (ZMO NPs) are widely used as electron transport layers in optoelectronic devices such as light-emitting diodes (LEDs) and photodiodes (PDs) primarily because of their facile synthesis and excellent electron transport properties. However, the surface hydroxyl groups (‒OH) on the ZMO NPs introduce charge traps, inhibit electron transport, and reduce device stability, particularly under ambient humidity and oxygen. Therefore, in this study, an alcohol treatment (AT) method was developed to remove surface ‒OH via proton transfer to effectively reduce trap states and dipole moments and enhance surface passivation. Quantum-dot-based LEDs and PDs fabricated using the AT-based ZMO NPs exhibited improved current density, luminance, and external quantum efficiency compared to the untreated devices. Notably, the methanol-treated devices achieved an operational lifetime of approximately 28 h under ambient conditions, representing a substantial advancement in device stability and performance. The AT approach is a simple and effective strategy for optimizing the ZMO NPs for next-generation optoelectronic applications. |
| format | Article |
| id | doaj-art-948a2e93e09b4f1587015037fc90e032 |
| institution | DOAJ |
| issn | 2196-5404 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nano Convergence |
| spelling | doaj-art-948a2e93e09b4f1587015037fc90e0322025-08-20T02:39:24ZengSpringerOpenNano Convergence2196-54042025-06-0112111210.1186/s40580-025-00493-2Surface passivation engineering for stable optoelectronic devices via hydroxyl-free ZnMgO nanoparticlesSeongkeun Oh0Jaehwi Choi1Junhyeok Park2Young Kyun Choi3Taesung Park4Awais Ali5Junhyuk Ahn6Jiwan Kim7Soong Ju Oh8Department of Materials Science and Engineering, Korea UniversityDepartment of Advanced Materials Engineering, Kyonggi UniversityDepartment of Materials Science and Engineering, Korea UniversityDepartment of Materials Science and Engineering, Korea UniversityDepartment of Materials Science and Engineering, Korea UniversityDepartment of Materials Science and Engineering, Korea UniversityDepartment of Materials Science and Engineering, Korea UniversityDepartment of Advanced Materials Engineering, Kyonggi UniversityDepartment of Materials Science and Engineering, Korea UniversityAbstract ZnMgO nanoparticles (ZMO NPs) are widely used as electron transport layers in optoelectronic devices such as light-emitting diodes (LEDs) and photodiodes (PDs) primarily because of their facile synthesis and excellent electron transport properties. However, the surface hydroxyl groups (‒OH) on the ZMO NPs introduce charge traps, inhibit electron transport, and reduce device stability, particularly under ambient humidity and oxygen. Therefore, in this study, an alcohol treatment (AT) method was developed to remove surface ‒OH via proton transfer to effectively reduce trap states and dipole moments and enhance surface passivation. Quantum-dot-based LEDs and PDs fabricated using the AT-based ZMO NPs exhibited improved current density, luminance, and external quantum efficiency compared to the untreated devices. Notably, the methanol-treated devices achieved an operational lifetime of approximately 28 h under ambient conditions, representing a substantial advancement in device stability and performance. The AT approach is a simple and effective strategy for optimizing the ZMO NPs for next-generation optoelectronic applications.https://doi.org/10.1186/s40580-025-00493-2Quantum dotSurface engineeringOptoelectronic devicesHydroxyl-freeAlcohol treatment |
| spellingShingle | Seongkeun Oh Jaehwi Choi Junhyeok Park Young Kyun Choi Taesung Park Awais Ali Junhyuk Ahn Jiwan Kim Soong Ju Oh Surface passivation engineering for stable optoelectronic devices via hydroxyl-free ZnMgO nanoparticles Nano Convergence Quantum dot Surface engineering Optoelectronic devices Hydroxyl-free Alcohol treatment |
| title | Surface passivation engineering for stable optoelectronic devices via hydroxyl-free ZnMgO nanoparticles |
| title_full | Surface passivation engineering for stable optoelectronic devices via hydroxyl-free ZnMgO nanoparticles |
| title_fullStr | Surface passivation engineering for stable optoelectronic devices via hydroxyl-free ZnMgO nanoparticles |
| title_full_unstemmed | Surface passivation engineering for stable optoelectronic devices via hydroxyl-free ZnMgO nanoparticles |
| title_short | Surface passivation engineering for stable optoelectronic devices via hydroxyl-free ZnMgO nanoparticles |
| title_sort | surface passivation engineering for stable optoelectronic devices via hydroxyl free znmgo nanoparticles |
| topic | Quantum dot Surface engineering Optoelectronic devices Hydroxyl-free Alcohol treatment |
| url | https://doi.org/10.1186/s40580-025-00493-2 |
| work_keys_str_mv | AT seongkeunoh surfacepassivationengineeringforstableoptoelectronicdevicesviahydroxylfreeznmgonanoparticles AT jaehwichoi surfacepassivationengineeringforstableoptoelectronicdevicesviahydroxylfreeznmgonanoparticles AT junhyeokpark surfacepassivationengineeringforstableoptoelectronicdevicesviahydroxylfreeznmgonanoparticles AT youngkyunchoi surfacepassivationengineeringforstableoptoelectronicdevicesviahydroxylfreeznmgonanoparticles AT taesungpark surfacepassivationengineeringforstableoptoelectronicdevicesviahydroxylfreeznmgonanoparticles AT awaisali surfacepassivationengineeringforstableoptoelectronicdevicesviahydroxylfreeznmgonanoparticles AT junhyukahn surfacepassivationengineeringforstableoptoelectronicdevicesviahydroxylfreeznmgonanoparticles AT jiwankim surfacepassivationengineeringforstableoptoelectronicdevicesviahydroxylfreeznmgonanoparticles AT soongjuoh surfacepassivationengineeringforstableoptoelectronicdevicesviahydroxylfreeznmgonanoparticles |