In situ synchrotron x-ray studies of epitaxial SrCoOx films during ionic liquid gating
The manipulation of ions in complex oxide materials can be used to mimic brain-like plasticity through changes to the resistivity of a neuromorphic device. Advances in the design of more energy efficient devices require improved understanding of how ions migrate within a material and across its inte...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2025-06-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0269796 |
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| author | Yan Li Jill K. Wenderott Tadesse Billo Maoyu Wang Alvin Chang Hui Cao Xi Yan D. Bruce Buchholz Zhenxing Feng Hua Zhou Supratik Guha Dillon D. Fong |
| author_facet | Yan Li Jill K. Wenderott Tadesse Billo Maoyu Wang Alvin Chang Hui Cao Xi Yan D. Bruce Buchholz Zhenxing Feng Hua Zhou Supratik Guha Dillon D. Fong |
| author_sort | Yan Li |
| collection | DOAJ |
| description | The manipulation of ions in complex oxide materials can be used to mimic brain-like plasticity through changes to the resistivity of a neuromorphic device. Advances in the design of more energy efficient devices require improved understanding of how ions migrate within a material and across its interface. We investigate the exchange of oxygen and hydrogen in a model SrCoOx epitaxial film—a material that transitions between a ferromagnetic metal and antiferromagnetic insulator depending on the oxygen concentration. Changes to the film during ionic liquid gating were measured by in situ synchrotron x-ray techniques as a function of time and gate voltage, examining the reversibility of the oxide over one complete gating cycle. We find that the out-of-plane lattice constant and oxygen vacancy concentration of SrCoOx are largely reversible although changes were observed in the ordered vacancy structure. Our results provide much needed insight into electrolyte-gated phase behavior in the transition metal oxides. |
| format | Article |
| id | doaj-art-945f6927f2c645db90f7f52245dd6793 |
| institution | Kabale University |
| issn | 2166-532X |
| language | English |
| publishDate | 2025-06-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj-art-945f6927f2c645db90f7f52245dd67932025-08-20T03:29:13ZengAIP Publishing LLCAPL Materials2166-532X2025-06-01136061106061106-710.1063/5.0269796In situ synchrotron x-ray studies of epitaxial SrCoOx films during ionic liquid gatingYan Li0Jill K. Wenderott1Tadesse Billo2Maoyu Wang3Alvin Chang4Hui Cao5Xi Yan6D. Bruce Buchholz7Zhenxing Feng8Hua Zhou9Supratik Guha10Dillon D. Fong11Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USAMaterials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USAMaterials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USAX-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Lemont, Illinois 60439, USASchool of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, Oregon 97331, USAMaterials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USAMaterials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USADepartment of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60201, USASchool of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, Oregon 97331, USAX-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Lemont, Illinois 60439, USAMaterials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USAMaterials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USAThe manipulation of ions in complex oxide materials can be used to mimic brain-like plasticity through changes to the resistivity of a neuromorphic device. Advances in the design of more energy efficient devices require improved understanding of how ions migrate within a material and across its interface. We investigate the exchange of oxygen and hydrogen in a model SrCoOx epitaxial film—a material that transitions between a ferromagnetic metal and antiferromagnetic insulator depending on the oxygen concentration. Changes to the film during ionic liquid gating were measured by in situ synchrotron x-ray techniques as a function of time and gate voltage, examining the reversibility of the oxide over one complete gating cycle. We find that the out-of-plane lattice constant and oxygen vacancy concentration of SrCoOx are largely reversible although changes were observed in the ordered vacancy structure. Our results provide much needed insight into electrolyte-gated phase behavior in the transition metal oxides.http://dx.doi.org/10.1063/5.0269796 |
| spellingShingle | Yan Li Jill K. Wenderott Tadesse Billo Maoyu Wang Alvin Chang Hui Cao Xi Yan D. Bruce Buchholz Zhenxing Feng Hua Zhou Supratik Guha Dillon D. Fong In situ synchrotron x-ray studies of epitaxial SrCoOx films during ionic liquid gating APL Materials |
| title | In situ synchrotron x-ray studies of epitaxial SrCoOx films during ionic liquid gating |
| title_full | In situ synchrotron x-ray studies of epitaxial SrCoOx films during ionic liquid gating |
| title_fullStr | In situ synchrotron x-ray studies of epitaxial SrCoOx films during ionic liquid gating |
| title_full_unstemmed | In situ synchrotron x-ray studies of epitaxial SrCoOx films during ionic liquid gating |
| title_short | In situ synchrotron x-ray studies of epitaxial SrCoOx films during ionic liquid gating |
| title_sort | in situ synchrotron x ray studies of epitaxial srcoox films during ionic liquid gating |
| url | http://dx.doi.org/10.1063/5.0269796 |
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