Active and integrated electronic metadevices for future telecommunication circuits
Abstract The rise of data-driven demands calls for terahertz-capable circuits, however, semiconductor devices still face performance limitations above 100 GHz, posing a challenge for wireless networks. Electronic metadevice is a concept inspired by optical metamaterials, which was first demonstrated...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-03-01
|
| Series: | Communications Engineering |
| Online Access: | https://doi.org/10.1038/s44172-025-00374-w |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850054332007841792 |
|---|---|
| author | Mohammad Samizadeh Nikoo Chenhao Chu Boce Lin Yuqi Liu Youngin Kim Hua Wang |
| author_facet | Mohammad Samizadeh Nikoo Chenhao Chu Boce Lin Yuqi Liu Youngin Kim Hua Wang |
| author_sort | Mohammad Samizadeh Nikoo |
| collection | DOAJ |
| description | Abstract The rise of data-driven demands calls for terahertz-capable circuits, however, semiconductor devices still face performance limitations above 100 GHz, posing a challenge for wireless networks. Electronic metadevice is a concept inspired by optical metamaterials, which was first demonstrated in the form of switches that could challenge the limitations of traditional semiconductor devices. Here we unveil critical aspects of this technology and demonstrate three-terminal active metadevices, which show promise for the next generation of telecommunication circuits. We show near-ideal linear and nonlinear operation of electronic metadevices, approaching the material limits, and by monolithic integration of electronic metadevices, we demonstrate picosecond terahertz switches with low insertion loss and high isolation. We finally present three-terminal metadevices offering parametric amplification and active mixing, which show ultrawideband operation, supporting data-rates exceeding 40 Gbps. Our work provides a solution for future ultrafast electronics with applications in 6 G telecommunications, enabling the development of new functional devices based on the electronic metadevice concept. |
| format | Article |
| id | doaj-art-945ea9fac0a14a7ab3133bef21b00e99 |
| institution | DOAJ |
| issn | 2731-3395 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Communications Engineering |
| spelling | doaj-art-945ea9fac0a14a7ab3133bef21b00e992025-08-20T02:52:17ZengNature PortfolioCommunications Engineering2731-33952025-03-014111210.1038/s44172-025-00374-wActive and integrated electronic metadevices for future telecommunication circuitsMohammad Samizadeh Nikoo0Chenhao Chu1Boce Lin2Yuqi Liu3Youngin Kim4Hua Wang5School of Information Technology and Electrical Engineering, ETH ZürichSchool of Information Technology and Electrical Engineering, ETH ZürichSchool of Information Technology and Electrical Engineering, ETH ZürichSchool of Information Technology and Electrical Engineering, ETH ZürichSchool of Information Technology and Electrical Engineering, ETH ZürichSchool of Information Technology and Electrical Engineering, ETH ZürichAbstract The rise of data-driven demands calls for terahertz-capable circuits, however, semiconductor devices still face performance limitations above 100 GHz, posing a challenge for wireless networks. Electronic metadevice is a concept inspired by optical metamaterials, which was first demonstrated in the form of switches that could challenge the limitations of traditional semiconductor devices. Here we unveil critical aspects of this technology and demonstrate three-terminal active metadevices, which show promise for the next generation of telecommunication circuits. We show near-ideal linear and nonlinear operation of electronic metadevices, approaching the material limits, and by monolithic integration of electronic metadevices, we demonstrate picosecond terahertz switches with low insertion loss and high isolation. We finally present three-terminal metadevices offering parametric amplification and active mixing, which show ultrawideband operation, supporting data-rates exceeding 40 Gbps. Our work provides a solution for future ultrafast electronics with applications in 6 G telecommunications, enabling the development of new functional devices based on the electronic metadevice concept.https://doi.org/10.1038/s44172-025-00374-w |
| spellingShingle | Mohammad Samizadeh Nikoo Chenhao Chu Boce Lin Yuqi Liu Youngin Kim Hua Wang Active and integrated electronic metadevices for future telecommunication circuits Communications Engineering |
| title | Active and integrated electronic metadevices for future telecommunication circuits |
| title_full | Active and integrated electronic metadevices for future telecommunication circuits |
| title_fullStr | Active and integrated electronic metadevices for future telecommunication circuits |
| title_full_unstemmed | Active and integrated electronic metadevices for future telecommunication circuits |
| title_short | Active and integrated electronic metadevices for future telecommunication circuits |
| title_sort | active and integrated electronic metadevices for future telecommunication circuits |
| url | https://doi.org/10.1038/s44172-025-00374-w |
| work_keys_str_mv | AT mohammadsamizadehnikoo activeandintegratedelectronicmetadevicesforfuturetelecommunicationcircuits AT chenhaochu activeandintegratedelectronicmetadevicesforfuturetelecommunicationcircuits AT bocelin activeandintegratedelectronicmetadevicesforfuturetelecommunicationcircuits AT yuqiliu activeandintegratedelectronicmetadevicesforfuturetelecommunicationcircuits AT younginkim activeandintegratedelectronicmetadevicesforfuturetelecommunicationcircuits AT huawang activeandintegratedelectronicmetadevicesforfuturetelecommunicationcircuits |