High Temperature Operation of Co-Doped InAs Quantum Dot Laser for O-Band Emission

High Temperature Operation of Co-Doped InAs Quantum Dot Laser for O-Band Emission

We demonstrate high temperature operation of InAs quantum dot lasers through active region engineering. We grew an n-doped region within the InAs quantum dot (QD) layer and incorporated a 10 nm p-GaAs modulation-doped layer within a 43 nm GaAs spacer layer, both of which are essential components of...

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Bibliographic Details
Main Authors: Pawan Mishra, Lydia Jarvis, Chris Hodges, Abigail Enderson, Fwoziah Albeladi, Sara-Jayne Gillgrass, George M. Jandu, Richard Forrest, Craig P. Allford, Huiwen Deng, Mingchu Tang, Huiyun Liu, Samuel Shutts, Peter M. Smowton
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Photonics Journal
Subjects:
Co-doping
high temperature
InAs quantum dots
p-modulation
semiconductor laser
Online Access:https://ieeexplore.ieee.org/document/10964309/
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Summary:We demonstrate high temperature operation of InAs quantum dot lasers through active region engineering. We grew an n-doped region within the InAs quantum dot (QD) layer and incorporated a 10 nm p-GaAs modulation-doped layer within a 43 nm GaAs spacer layer, both of which are essential components of the active region of the InAs QD laser device. The co-doping scheme enables the demonstration of InAs QD laser device with only seven layers of InAs QDs in the active region for high temperature operation, which is compared with a conventional undoped InAs QD laser device. A Fabry-Pérot laser device with as-cleaved facets and a co-doped InAs QD active region enables ultra-high temperature pulsed-biased O-band laser operation up to 202 °C, compared to 180 °C for conventional undoped InAs QD laser, and without requiring high-reflective facet coatings.
ISSN:1943-0655

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