Hopping Conductivity and Negative Magnetoresistance of the Bulk Nanograined Bi2Te3 Material
The bulk nanograined Bi2Te3 material was prepared by the microwave assisted solvothermal method and cold isostatic pressure method. It was found that above T* ≈ 190 K the temperature dependence of the specific electrical resistivity of material is of metallic type, while below this temperature a sem...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2015-12-01
|
| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2015/4/articles/jnep_2015_V7_04073.pdf |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | The bulk nanograined Bi2Te3 material was prepared by the microwave assisted solvothermal method and cold isostatic pressure method. It was found that above T* ≈ 190 K the temperature dependence of the specific electrical resistivity of material is of metallic type, while below this temperature a semiconductor conductivity takes place. Within the temperature ΔT ≈ 90 K-35 K interval the electrical conductivity of material can be described by the variable-range hopping conductivity mechanism. Negative magnetoresistance was observed at the same temperature interval. |
|---|---|
| ISSN: | 2077-6772 |