APA (7th ed.) Citation

Lin, J., Huang, S., & Hwu, J. Enhancement of the Transient Current Behavior of MIS Tunnel Diodes With Ultra-Edge-Thickened (UET) Oxide under the Consideration of Tunnel Oxide Areas. IEEE.

Chicago Style (17th ed.) Citation

Lin, Jun-Yi, Sung-Wei Huang, and Jenn-Gwo Hwu. Enhancement of the Transient Current Behavior of MIS Tunnel Diodes With Ultra-Edge-Thickened (UET) Oxide Under the Consideration of Tunnel Oxide Areas. IEEE.

MLA (9th ed.) Citation

Lin, Jun-Yi, et al. Enhancement of the Transient Current Behavior of MIS Tunnel Diodes With Ultra-Edge-Thickened (UET) Oxide Under the Consideration of Tunnel Oxide Areas. IEEE.