Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition
Abstract Using our recently developed radical-enhanced metalorganic chemical vapor deposition (REMOCVD) technique, we have grown gallium nitride (GaN) on bulk GaN and GaN on Si templates. Three features make up this system: (1) applying very high-frequency power (60 MHz) to increase the plasma densi...
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2024-05-01
|
| Series: | Scientific Reports |
| Subjects: | |
| Online Access: | https://doi.org/10.1038/s41598-024-61501-9 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850102850705686528 |
|---|---|
| author | Arun Kumar Dhasiyan Frank Wilson Amalraj Swathy Jayaprasad Naohiro Shimizu Osamu Oda Kenji Ishikawa Masaru Hori |
| author_facet | Arun Kumar Dhasiyan Frank Wilson Amalraj Swathy Jayaprasad Naohiro Shimizu Osamu Oda Kenji Ishikawa Masaru Hori |
| author_sort | Arun Kumar Dhasiyan |
| collection | DOAJ |
| description | Abstract Using our recently developed radical-enhanced metalorganic chemical vapor deposition (REMOCVD) technique, we have grown gallium nitride (GaN) on bulk GaN and GaN on Si templates. Three features make up this system: (1) applying very high-frequency power (60 MHz) to increase the plasma density; (2) introducing H2 and N2 gas in the plasma discharge region to produce active NHx radical species in addition to nitrogen radicals; and (3) supplying radicals under remote plasma arrangement with a Faraday cage to suppress charged ions and photons. Using this new REMOCVD system, it was found that high-quality crystals can be grown at lower temperatures than that of MOCVD but the disadvantage was that the growth rate was smaller as 0.2–0.8 μm/h than that by MOCVD. In the present work, we have used a pBN inner shield to prevent the deactivation of radicals to increase the growth rate. The growth conditions such as the plasma power, trimethylgallium (TMG) source flow rate, N2 + H2 gas mixture flow rate, and the ratio of N2/H2 were optimized and it was found that the growth rate could be increased up to 3.4 μm/h with remarkably high crystalline quality comparable to that of MOCVD. The XRD-FWHM of GaN grown on the GaN/Si template and the bulk GaN substrate were 977 arcsec and 72 arcsec respectively. This work may be very promising to achieve high-power GaN/GaN devices. |
| format | Article |
| id | doaj-art-92d0d66c5aa24cb99c6eaaf75013cf14 |
| institution | DOAJ |
| issn | 2045-2322 |
| language | English |
| publishDate | 2024-05-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj-art-92d0d66c5aa24cb99c6eaaf75013cf142025-08-20T02:39:40ZengNature PortfolioScientific Reports2045-23222024-05-0114111810.1038/s41598-024-61501-9Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor depositionArun Kumar Dhasiyan0Frank Wilson Amalraj1Swathy Jayaprasad2Naohiro Shimizu3Osamu Oda4Kenji Ishikawa5Masaru Hori6Center for Low-Temperature Plasma Science (cLPS), Nagoya UniversityCenter for Low-Temperature Plasma Science (cLPS), Nagoya UniversityCenter for Low-Temperature Plasma Science (cLPS), Nagoya UniversityCenter for Low-Temperature Plasma Science (cLPS), Nagoya UniversityCenter for Low-Temperature Plasma Science (cLPS), Nagoya UniversityCenter for Low-Temperature Plasma Science (cLPS), Nagoya UniversityCenter for Low-Temperature Plasma Science (cLPS), Nagoya UniversityAbstract Using our recently developed radical-enhanced metalorganic chemical vapor deposition (REMOCVD) technique, we have grown gallium nitride (GaN) on bulk GaN and GaN on Si templates. Three features make up this system: (1) applying very high-frequency power (60 MHz) to increase the plasma density; (2) introducing H2 and N2 gas in the plasma discharge region to produce active NHx radical species in addition to nitrogen radicals; and (3) supplying radicals under remote plasma arrangement with a Faraday cage to suppress charged ions and photons. Using this new REMOCVD system, it was found that high-quality crystals can be grown at lower temperatures than that of MOCVD but the disadvantage was that the growth rate was smaller as 0.2–0.8 μm/h than that by MOCVD. In the present work, we have used a pBN inner shield to prevent the deactivation of radicals to increase the growth rate. The growth conditions such as the plasma power, trimethylgallium (TMG) source flow rate, N2 + H2 gas mixture flow rate, and the ratio of N2/H2 were optimized and it was found that the growth rate could be increased up to 3.4 μm/h with remarkably high crystalline quality comparable to that of MOCVD. The XRD-FWHM of GaN grown on the GaN/Si template and the bulk GaN substrate were 977 arcsec and 72 arcsec respectively. This work may be very promising to achieve high-power GaN/GaN devices.https://doi.org/10.1038/s41598-024-61501-9Compound semiconductorRadical enhanced metalorganic chemical vapor depositionGallium nitrideGrowth rateGaN/GaN power device |
| spellingShingle | Arun Kumar Dhasiyan Frank Wilson Amalraj Swathy Jayaprasad Naohiro Shimizu Osamu Oda Kenji Ishikawa Masaru Hori Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition Scientific Reports Compound semiconductor Radical enhanced metalorganic chemical vapor deposition Gallium nitride Growth rate GaN/GaN power device |
| title | Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition |
| title_full | Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition |
| title_fullStr | Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition |
| title_full_unstemmed | Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition |
| title_short | Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition |
| title_sort | epitaxial growth of high quality gan with a high growth rate at low temperatures by radical enhanced metalorganic chemical vapor deposition |
| topic | Compound semiconductor Radical enhanced metalorganic chemical vapor deposition Gallium nitride Growth rate GaN/GaN power device |
| url | https://doi.org/10.1038/s41598-024-61501-9 |
| work_keys_str_mv | AT arunkumardhasiyan epitaxialgrowthofhighqualityganwithahighgrowthrateatlowtemperaturesbyradicalenhancedmetalorganicchemicalvapordeposition AT frankwilsonamalraj epitaxialgrowthofhighqualityganwithahighgrowthrateatlowtemperaturesbyradicalenhancedmetalorganicchemicalvapordeposition AT swathyjayaprasad epitaxialgrowthofhighqualityganwithahighgrowthrateatlowtemperaturesbyradicalenhancedmetalorganicchemicalvapordeposition AT naohiroshimizu epitaxialgrowthofhighqualityganwithahighgrowthrateatlowtemperaturesbyradicalenhancedmetalorganicchemicalvapordeposition AT osamuoda epitaxialgrowthofhighqualityganwithahighgrowthrateatlowtemperaturesbyradicalenhancedmetalorganicchemicalvapordeposition AT kenjiishikawa epitaxialgrowthofhighqualityganwithahighgrowthrateatlowtemperaturesbyradicalenhancedmetalorganicchemicalvapordeposition AT masaruhori epitaxialgrowthofhighqualityganwithahighgrowthrateatlowtemperaturesbyradicalenhancedmetalorganicchemicalvapordeposition |