SILICON-GERMANIUM NANOSTRUCTURES WITH GERMANIUM QUANTUM DOTS FOR OPTOELECTRONIC APPLICATIONS
Influence of technological parameters (temperature of substrate, number of Ge layers, ion treatment) on optical properties of Si/Ge nanostructures with Ge quantum dots have been studied. The Raman scattering lines related to the Si-Si, Ge-Ge and Si-Ge vibration modes have been detected in the Raman...
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| Format: | Article |
| Language: | English |
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Belarusian National Technical University
2015-04-01
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| Series: | Приборы и методы измерений |
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| Online Access: | https://pimi.bntu.by/jour/article/view/117 |
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| author | A. V. Mudryi F. Mofidnahai A. V. Karotki A. V. Dvurechensky Zh. V. Smagina V. A. Volodin P. L. Novikov |
| author_facet | A. V. Mudryi F. Mofidnahai A. V. Karotki A. V. Dvurechensky Zh. V. Smagina V. A. Volodin P. L. Novikov |
| author_sort | A. V. Mudryi |
| collection | DOAJ |
| description | Influence of technological parameters (temperature of substrate, number of Ge layers, ion treatment) on optical properties of Si/Ge nanostructures with Ge quantum dots have been studied. The Raman scattering lines related to the Si-Si, Ge-Ge and Si-Ge vibration modes have been detected in the Raman spectra of Si/Ge nanostructures. A significant enhancement of intensity of luminescence band at 0.8 eV related with radiative recombination on Ge quantum dots is observed after hydrogen-plasma ion treatment of Si-Ge nanostructures. It is important for increasing of the luminescence quantum efficienty of devices on the base of Si nanolayer with Ge quantum dots. |
| format | Article |
| id | doaj-art-9278536b5cd84ea383fa656b21de189a |
| institution | Kabale University |
| issn | 2220-9506 2414-0473 |
| language | English |
| publishDate | 2015-04-01 |
| publisher | Belarusian National Technical University |
| record_format | Article |
| series | Приборы и методы измерений |
| spelling | doaj-art-9278536b5cd84ea383fa656b21de189a2025-08-20T03:37:05ZengBelarusian National Technical UniversityПриборы и методы измерений2220-95062414-04732015-04-01014450111SILICON-GERMANIUM NANOSTRUCTURES WITH GERMANIUM QUANTUM DOTS FOR OPTOELECTRONIC APPLICATIONSA. V. Mudryi0F. Mofidnahai1A. V. Karotki2A. V. Dvurechensky3Zh. V. Smagina4V. A. Volodin5P. L. Novikov6Научно-практический центр Национальной академии наук Беларуси по материаловедению, г. МинскНаучно-практический центр Национальной академии наук Беларуси по материаловедению, г. МинскНаучно-практический центр Национальной академии наук Беларуси по материаловедению, г. МинскИнститут физики полупроводников Сибирского отделения Российской академии наук, г. НовосибирскИнститут физики полупроводников Сибирского отделения Российской академии наук, г. НовосибирскИнститут физики полупроводников Сибирского отделения Российской академии наук, г. НовосибирскИнститут физики полупроводников Сибирского отделения Российской академии наук, г. НовосибирскInfluence of technological parameters (temperature of substrate, number of Ge layers, ion treatment) on optical properties of Si/Ge nanostructures with Ge quantum dots have been studied. The Raman scattering lines related to the Si-Si, Ge-Ge and Si-Ge vibration modes have been detected in the Raman spectra of Si/Ge nanostructures. A significant enhancement of intensity of luminescence band at 0.8 eV related with radiative recombination on Ge quantum dots is observed after hydrogen-plasma ion treatment of Si-Ge nanostructures. It is important for increasing of the luminescence quantum efficienty of devices on the base of Si nanolayer with Ge quantum dots.https://pimi.bntu.by/jour/article/view/117si/ge nanostructuresge quantum dotsraman scatteringluminescenceinternal strains |
| spellingShingle | A. V. Mudryi F. Mofidnahai A. V. Karotki A. V. Dvurechensky Zh. V. Smagina V. A. Volodin P. L. Novikov SILICON-GERMANIUM NANOSTRUCTURES WITH GERMANIUM QUANTUM DOTS FOR OPTOELECTRONIC APPLICATIONS Приборы и методы измерений si/ge nanostructures ge quantum dots raman scattering luminescence internal strains |
| title | SILICON-GERMANIUM NANOSTRUCTURES WITH GERMANIUM QUANTUM DOTS FOR OPTOELECTRONIC APPLICATIONS |
| title_full | SILICON-GERMANIUM NANOSTRUCTURES WITH GERMANIUM QUANTUM DOTS FOR OPTOELECTRONIC APPLICATIONS |
| title_fullStr | SILICON-GERMANIUM NANOSTRUCTURES WITH GERMANIUM QUANTUM DOTS FOR OPTOELECTRONIC APPLICATIONS |
| title_full_unstemmed | SILICON-GERMANIUM NANOSTRUCTURES WITH GERMANIUM QUANTUM DOTS FOR OPTOELECTRONIC APPLICATIONS |
| title_short | SILICON-GERMANIUM NANOSTRUCTURES WITH GERMANIUM QUANTUM DOTS FOR OPTOELECTRONIC APPLICATIONS |
| title_sort | silicon germanium nanostructures with germanium quantum dots for optoelectronic applications |
| topic | si/ge nanostructures ge quantum dots raman scattering luminescence internal strains |
| url | https://pimi.bntu.by/jour/article/view/117 |
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