Design and Performance Enhancement of a GaAs-Based Homojunction Solar Cell Using Ga0.5In0.5P as a Back Surface Field (BSF): A Simulation Approach

The GaAs semiconductor is a solar energy promising material for photovoltaic applications due to its good optical and electronic properties. In this work, a homojunction GaAs solar cell with AlxGa1-xAs and GayIn1-yP solar energy materials as window and back surface field (BSF) layers, respectively,...

Full description

Saved in:
Bibliographic Details
Main Authors: Cedrik Fotcha Kamdem, Ariel Teyou Ngoupo, François Xavier Abomo Abega, Aimé Magloire Ntouga Abena, Jean-Marie Bienvenu Ndjaka
Format: Article
Language:English
Published: Wiley 2023-01-01
Series:International Journal of Photoenergy
Online Access:http://dx.doi.org/10.1155/2023/6204891
Tags: Add Tag
No Tags, Be the first to tag this record!