VN–VIn divacancies as the origin of non-radiative recombination centers in InGaN quantum wells
In this paper, we investigate the nature of surface defects originating from the high-temperature (HT) GaN buffer and their incorporation into InGaN quantum wells (QWs) grown using the metalorganic vapor phase epitaxy technique. In particular, we conduct a detailed examination of the migration proce...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-03-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0256650 |
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