Analysis of Silicon Solar Cell Device Parameters using PC1D
Perceivingthe role of each layer relevant to the parameters in a silicon solar cell isimportant for engineering of solar structures for high efficiencies. PC1Dsimulation of silicon solar cells were carried out in this work to evaluate theperformance parameters of each layer and outcomes were analyze...
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Sakarya University
2019-12-01
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| Series: | Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi |
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| Online Access: | https://dergipark.org.tr/tr/download/article-file/828465 |
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| author | Abdullah Üzüm Al-montazer Mandong |
| author_facet | Abdullah Üzüm Al-montazer Mandong |
| author_sort | Abdullah Üzüm |
| collection | DOAJ |
| description | Perceivingthe role of each layer relevant to the parameters in a silicon solar cell isimportant for engineering of solar structures for high efficiencies. PC1Dsimulation of silicon solar cells were carried out in this work to evaluate theperformance parameters of each layer and outcomes were analyzed consideringtheir effects in final cell. Absorber layer, emitter layer, antireflectioncoating layer and back surface field layer were studied especially in terms ofdoping levels, thicknesses, absorbance behavior and final cell performance. Theshort circuit current density (Jsc) is found to be directlyproportional to the absorber layer thickness until the thickness of 160µm whereasthe open circuit voltage (Voc) is inversely proportional for therange of 30 to 280µm. The device with 2x1020 cm-3 dopingconcentration of emitter was more efficient for homogenous emitter solar cells.The thickness of emitter has degrading effects on the efficiency of the device,the device with 0.1µm emitter thickness is found to have the highestefficiency. Doping concentration of back surface field had considerable effecton Voc of the device for the range of 3x1017 to 3x1018cm-3. Triple layer antireflection coating improved the short circuitcurrent density by a ratio of 50.8% and overall efficiency by a ratio of 51.07%comparing to the those of the cells without antireflection coating. Measureddata of a fabricated high efficiency solar cell was in conformity with theresults of the simulation. According the performed studies and achievedresults, understanding and estimating the effects of these primary parameterson solar cell performance is beneficial for designing a high efficiency solarcell structure. |
| format | Article |
| id | doaj-art-90c8571843884f648e2467a15fc0ae3b |
| institution | OA Journals |
| issn | 2147-835X |
| language | English |
| publishDate | 2019-12-01 |
| publisher | Sakarya University |
| record_format | Article |
| series | Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi |
| spelling | doaj-art-90c8571843884f648e2467a15fc0ae3b2025-08-20T01:57:44ZengSakarya UniversitySakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi2147-835X2019-12-012361190119710.16984/saufenbilder.55749028Analysis of Silicon Solar Cell Device Parameters using PC1DAbdullah Üzüm0https://orcid.org/0000-0001-5324-8892Al-montazer Mandong1https://orcid.org/0000-0003-3473-9869Karadeniz Technical UniversityKaradeniz Technical UniversityPerceivingthe role of each layer relevant to the parameters in a silicon solar cell isimportant for engineering of solar structures for high efficiencies. PC1Dsimulation of silicon solar cells were carried out in this work to evaluate theperformance parameters of each layer and outcomes were analyzed consideringtheir effects in final cell. Absorber layer, emitter layer, antireflectioncoating layer and back surface field layer were studied especially in terms ofdoping levels, thicknesses, absorbance behavior and final cell performance. Theshort circuit current density (Jsc) is found to be directlyproportional to the absorber layer thickness until the thickness of 160µm whereasthe open circuit voltage (Voc) is inversely proportional for therange of 30 to 280µm. The device with 2x1020 cm-3 dopingconcentration of emitter was more efficient for homogenous emitter solar cells.The thickness of emitter has degrading effects on the efficiency of the device,the device with 0.1µm emitter thickness is found to have the highestefficiency. Doping concentration of back surface field had considerable effecton Voc of the device for the range of 3x1017 to 3x1018cm-3. Triple layer antireflection coating improved the short circuitcurrent density by a ratio of 50.8% and overall efficiency by a ratio of 51.07%comparing to the those of the cells without antireflection coating. Measureddata of a fabricated high efficiency solar cell was in conformity with theresults of the simulation. According the performed studies and achievedresults, understanding and estimating the effects of these primary parameterson solar cell performance is beneficial for designing a high efficiency solarcell structure.https://dergipark.org.tr/tr/download/article-file/828465pc1dsolar cellcrystalline silicon |
| spellingShingle | Abdullah Üzüm Al-montazer Mandong Analysis of Silicon Solar Cell Device Parameters using PC1D Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi pc1d solar cell crystalline silicon |
| title | Analysis of Silicon Solar Cell Device Parameters using PC1D |
| title_full | Analysis of Silicon Solar Cell Device Parameters using PC1D |
| title_fullStr | Analysis of Silicon Solar Cell Device Parameters using PC1D |
| title_full_unstemmed | Analysis of Silicon Solar Cell Device Parameters using PC1D |
| title_short | Analysis of Silicon Solar Cell Device Parameters using PC1D |
| title_sort | analysis of silicon solar cell device parameters using pc1d |
| topic | pc1d solar cell crystalline silicon |
| url | https://dergipark.org.tr/tr/download/article-file/828465 |
| work_keys_str_mv | AT abdullahuzum analysisofsiliconsolarcelldeviceparametersusingpc1d AT almontazermandong analysisofsiliconsolarcelldeviceparametersusingpc1d |