High field performance of Si-doped n-AlN layers grown using pulsed MOCVD
We report on the study of high-field performance of Si-doped n -AlN layers that were grown using a pulsed metalorganic chemical vapor deposition (PMOCVD) process. In the past we showed this pulsed doping approach to lead to doping efficiency superior to that in the conventional MOCVD process. Here u...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/ade41c |
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