Long-wavelength VCSELs with buried tunnel junction: design optimization
The review is focused on reporting about design optimizations of the long-wavelength (LW) vertical-cavity surface-emitting laser (VCSELs) with an aperture formed by regrown (buried) tunnel junctions, pioneered by Amann et al from the Technical University of Munich and Vertilas GmbH. Ultra-low-cost s...
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IOP Publishing
2025-01-01
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| Series: | JPhys Photonics |
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| Online Access: | https://doi.org/10.1088/2515-7647/ade5de |
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| author | Andrey V Babichev Yakov N Kovach Sergey A Blokhin Leonid Ya Karachinsky Innokenty I Novikov Anton Yu Egorov Si-Cong Tian Dieter Bimberg |
| author_facet | Andrey V Babichev Yakov N Kovach Sergey A Blokhin Leonid Ya Karachinsky Innokenty I Novikov Anton Yu Egorov Si-Cong Tian Dieter Bimberg |
| author_sort | Andrey V Babichev |
| collection | DOAJ |
| description | The review is focused on reporting about design optimizations of the long-wavelength (LW) vertical-cavity surface-emitting laser (VCSELs) with an aperture formed by regrown (buried) tunnel junctions, pioneered by Amann et al from the Technical University of Munich and Vertilas GmbH. Ultra-low-cost solutions for the above 10 Gbps data rates were realized for a short-cavity (SC) design (with one semiconductor and one dielectric mirror) intended for the 1300–1550 nm range. A modified SC design was also used for 2D VCSEL arrays applied as a short wave infrared illuminator. Cost-effective ultra-high modulation rates (larger than 40 Gbps) were realized for the ultra SC design (with hybrid and dielectric mirrors), suitable for telecommunication and datacom. Since the current tuning range of LW VCSELs is significantly larger than that of distributed feedback edge-emitting lasers, Amann et al developed SC InP-based VCSELs design dedicated for gas detection (in the 1.8–2.3 μ m range). Tunable micro-electromechanical systems VCSELs have also been employed, as well as GaSb-based VCSELs. The latter ones are presently limited in use due to their low modal gain in the VCSEL geometry. The design of 1300–1550 nm wafer-fused (WF) VCSELs grown by metal-organic chemical vapor deposition was primarily developed by Kapon et al from the Swiss Federal Institute of Technology/BeamExpress SA. This approach allowed full-wafer processing and met Telcordia compliant qualifications. The design of WF VCSELs grown by industrial molecular-beam epitaxy has been implemented by the team of the present authors and demonstrated promising applications for intra-data-center connections. Trumpf Photonic Components announced the mass production of InP-based VCSELs above 1300 nm. Sony Semiconductor Solutions Corporation has been demonstrated 1380 nm range WF VCSELs. InP-based VCSELs design from Corning Inc. can also be adopted for under organic light-emitting diode display applications or as a short wave infrared illuminator. |
| format | Article |
| id | doaj-art-90992ffaf5814cffa7beb9484f935350 |
| institution | Kabale University |
| issn | 2515-7647 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
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| series | JPhys Photonics |
| spelling | doaj-art-90992ffaf5814cffa7beb9484f9353502025-08-20T03:30:37ZengIOP PublishingJPhys Photonics2515-76472025-01-017303200110.1088/2515-7647/ade5deLong-wavelength VCSELs with buried tunnel junction: design optimizationAndrey V Babichev0https://orcid.org/0000-0002-3463-4744Yakov N Kovach1https://orcid.org/0000-0003-4858-4968Sergey A Blokhin2https://orcid.org/0000-0002-5962-5529Leonid Ya Karachinsky3https://orcid.org/0000-0002-5634-8183Innokenty I Novikov4https://orcid.org/0000-0003-1983-0242Anton Yu Egorov5https://orcid.org/0000-0002-0789-4241Si-Cong Tian6https://orcid.org/0009-0001-3610-5993Dieter Bimberg7https://orcid.org/0000-0003-0364-6897ITMO University , Saint Petersburg, RussiaITMO University , Saint Petersburg, RussiaITMO University , Saint Petersburg, RussiaITMO University , Saint Petersburg, RussiaITMO University , Saint Petersburg, RussiaITMO University , Saint Petersburg, RussiaBimberg Chinese-German Center for Green Photonics, Changchun Institute of Optics , Fine Mechanics and Physics (CIOMP), Chinese Academy of Sciences (CAS), Changchun, People’s Republic of China; Center of Nanophotonics, Institute of Solid State Physics, Technische Universität Berlin , Berlin, GermanyBimberg Chinese-German Center for Green Photonics, Changchun Institute of Optics , Fine Mechanics and Physics (CIOMP), Chinese Academy of Sciences (CAS), Changchun, People’s Republic of China; Center of Nanophotonics, Institute of Solid State Physics, Technische Universität Berlin , Berlin, GermanyThe review is focused on reporting about design optimizations of the long-wavelength (LW) vertical-cavity surface-emitting laser (VCSELs) with an aperture formed by regrown (buried) tunnel junctions, pioneered by Amann et al from the Technical University of Munich and Vertilas GmbH. Ultra-low-cost solutions for the above 10 Gbps data rates were realized for a short-cavity (SC) design (with one semiconductor and one dielectric mirror) intended for the 1300–1550 nm range. A modified SC design was also used for 2D VCSEL arrays applied as a short wave infrared illuminator. Cost-effective ultra-high modulation rates (larger than 40 Gbps) were realized for the ultra SC design (with hybrid and dielectric mirrors), suitable for telecommunication and datacom. Since the current tuning range of LW VCSELs is significantly larger than that of distributed feedback edge-emitting lasers, Amann et al developed SC InP-based VCSELs design dedicated for gas detection (in the 1.8–2.3 μ m range). Tunable micro-electromechanical systems VCSELs have also been employed, as well as GaSb-based VCSELs. The latter ones are presently limited in use due to their low modal gain in the VCSEL geometry. The design of 1300–1550 nm wafer-fused (WF) VCSELs grown by metal-organic chemical vapor deposition was primarily developed by Kapon et al from the Swiss Federal Institute of Technology/BeamExpress SA. This approach allowed full-wafer processing and met Telcordia compliant qualifications. The design of WF VCSELs grown by industrial molecular-beam epitaxy has been implemented by the team of the present authors and demonstrated promising applications for intra-data-center connections. Trumpf Photonic Components announced the mass production of InP-based VCSELs above 1300 nm. Sony Semiconductor Solutions Corporation has been demonstrated 1380 nm range WF VCSELs. InP-based VCSELs design from Corning Inc. can also be adopted for under organic light-emitting diode display applications or as a short wave infrared illuminator.https://doi.org/10.1088/2515-7647/ade5devertical-cavity surface-emitting lasers (VCSELs)short-cavitywafer fusionoptical modulationlong-wavelengthburied tunnel junction |
| spellingShingle | Andrey V Babichev Yakov N Kovach Sergey A Blokhin Leonid Ya Karachinsky Innokenty I Novikov Anton Yu Egorov Si-Cong Tian Dieter Bimberg Long-wavelength VCSELs with buried tunnel junction: design optimization JPhys Photonics vertical-cavity surface-emitting lasers (VCSELs) short-cavity wafer fusion optical modulation long-wavelength buried tunnel junction |
| title | Long-wavelength VCSELs with buried tunnel junction: design optimization |
| title_full | Long-wavelength VCSELs with buried tunnel junction: design optimization |
| title_fullStr | Long-wavelength VCSELs with buried tunnel junction: design optimization |
| title_full_unstemmed | Long-wavelength VCSELs with buried tunnel junction: design optimization |
| title_short | Long-wavelength VCSELs with buried tunnel junction: design optimization |
| title_sort | long wavelength vcsels with buried tunnel junction design optimization |
| topic | vertical-cavity surface-emitting lasers (VCSELs) short-cavity wafer fusion optical modulation long-wavelength buried tunnel junction |
| url | https://doi.org/10.1088/2515-7647/ade5de |
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