Galvanic Displacement of Gallium Arsenide Surface: A Simple and Low-Cost Method to Deposit Metal Nanoparticles and Films
Herein, we report galvanic displacement of metal nanoparticles and films onto single-crystalline GaAs (100) substrates, a simple and cost-effective method to fabricate highly controlled metal/semiconductor interface. A time-resolved surface analysis of Au/GaAs system was conducted and microscopic m...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2014-01-01
|
| Series: | Journal of Chemistry |
| Online Access: | http://dx.doi.org/10.1155/2014/784824 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849404496819519488 |
|---|---|
| author | Ngoc Duy Pham Seok Ju Park Jun Pil Lee Ilwhan Oh |
| author_facet | Ngoc Duy Pham Seok Ju Park Jun Pil Lee Ilwhan Oh |
| author_sort | Ngoc Duy Pham |
| collection | DOAJ |
| description | Herein, we report galvanic displacement of metal nanoparticles and films onto single-crystalline GaAs (100) substrates, a simple and cost-effective method to fabricate highly controlled metal/semiconductor interface. A time-resolved surface analysis of Au/GaAs system was conducted and microscopic mechanism of galvanic displacement was elucidated in detail. Quantitative temporal XPS measurements of the Au/GaAs interface showed that, initially, fast Au growth was slowed down as the deposition process proceeded. This was attributed to growing oxide layer blocking hole conduction and causing quenching of the deposition process. Addition of various inorganic acids, which function as oxide etchants, was found to enhance deposition rates by effectively removing surface oxide, with HF the most effective. Various precious metals, such as Pt and Ag, could be deposited onto GaAs through galvanic displacement, which demonstrates the versatility of the method. |
| format | Article |
| id | doaj-art-9054ec8fb79a47fbbf97219ead31cfd5 |
| institution | Kabale University |
| issn | 2090-9063 2090-9071 |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Journal of Chemistry |
| spelling | doaj-art-9054ec8fb79a47fbbf97219ead31cfd52025-08-20T03:36:58ZengWileyJournal of Chemistry2090-90632090-90712014-01-01201410.1155/2014/784824784824Galvanic Displacement of Gallium Arsenide Surface: A Simple and Low-Cost Method to Deposit Metal Nanoparticles and FilmsNgoc Duy Pham0Seok Ju Park1Jun Pil Lee2Ilwhan Oh3Department of Applied Chemistry, Kumoh National Institute of Technology, Yangho-dong 1, Gumi-si, Gyeongbuk-do 730-701, Republic of KoreaDepartment of Applied Chemistry, Kumoh National Institute of Technology, Yangho-dong 1, Gumi-si, Gyeongbuk-do 730-701, Republic of KoreaDepartment of Applied Chemistry, Kumoh National Institute of Technology, Yangho-dong 1, Gumi-si, Gyeongbuk-do 730-701, Republic of KoreaDepartment of Applied Chemistry, Kumoh National Institute of Technology, Yangho-dong 1, Gumi-si, Gyeongbuk-do 730-701, Republic of KoreaHerein, we report galvanic displacement of metal nanoparticles and films onto single-crystalline GaAs (100) substrates, a simple and cost-effective method to fabricate highly controlled metal/semiconductor interface. A time-resolved surface analysis of Au/GaAs system was conducted and microscopic mechanism of galvanic displacement was elucidated in detail. Quantitative temporal XPS measurements of the Au/GaAs interface showed that, initially, fast Au growth was slowed down as the deposition process proceeded. This was attributed to growing oxide layer blocking hole conduction and causing quenching of the deposition process. Addition of various inorganic acids, which function as oxide etchants, was found to enhance deposition rates by effectively removing surface oxide, with HF the most effective. Various precious metals, such as Pt and Ag, could be deposited onto GaAs through galvanic displacement, which demonstrates the versatility of the method.http://dx.doi.org/10.1155/2014/784824 |
| spellingShingle | Ngoc Duy Pham Seok Ju Park Jun Pil Lee Ilwhan Oh Galvanic Displacement of Gallium Arsenide Surface: A Simple and Low-Cost Method to Deposit Metal Nanoparticles and Films Journal of Chemistry |
| title | Galvanic Displacement of Gallium Arsenide Surface: A Simple and Low-Cost Method to Deposit Metal Nanoparticles and Films |
| title_full | Galvanic Displacement of Gallium Arsenide Surface: A Simple and Low-Cost Method to Deposit Metal Nanoparticles and Films |
| title_fullStr | Galvanic Displacement of Gallium Arsenide Surface: A Simple and Low-Cost Method to Deposit Metal Nanoparticles and Films |
| title_full_unstemmed | Galvanic Displacement of Gallium Arsenide Surface: A Simple and Low-Cost Method to Deposit Metal Nanoparticles and Films |
| title_short | Galvanic Displacement of Gallium Arsenide Surface: A Simple and Low-Cost Method to Deposit Metal Nanoparticles and Films |
| title_sort | galvanic displacement of gallium arsenide surface a simple and low cost method to deposit metal nanoparticles and films |
| url | http://dx.doi.org/10.1155/2014/784824 |
| work_keys_str_mv | AT ngocduypham galvanicdisplacementofgalliumarsenidesurfaceasimpleandlowcostmethodtodepositmetalnanoparticlesandfilms AT seokjupark galvanicdisplacementofgalliumarsenidesurfaceasimpleandlowcostmethodtodepositmetalnanoparticlesandfilms AT junpillee galvanicdisplacementofgalliumarsenidesurfaceasimpleandlowcostmethodtodepositmetalnanoparticlesandfilms AT ilwhanoh galvanicdisplacementofgalliumarsenidesurfaceasimpleandlowcostmethodtodepositmetalnanoparticlesandfilms |