Discovery of a Robust P‐Type Ultrawide Bandgap Oxide Semiconductor: LiGa5O8
Abstract LiGa5O8, an ultrawide bandgap semiconductor, is discovered to exhibit p‐type conductivity at room temperature, making it the widest bandgap p‐type oxide semiconductor known to date. Utilizing a mist–chemical vapor deposition (M–CVD) technique, successful growth of p‐type LiGa5O8 thin films...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-01-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202300550 |
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