GeSn Nanobeam Light-Emitting Diode as a GHz-Modulated Light Source

Designs and theoretical analysis are presented for a room temperature resonant-cavity-enhanced GeSn LED whose emission peaks at the 2 <inline-formula><tex-math notation="LaTeX">$\mu$</tex-math></inline-formula>m wavelength. The Ge/GeSn/Ge PIN hetero-diode of length...

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Bibliographic Details
Main Authors: Ricky Gibson, Joshua Hendrickson, Richard A. Soref
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Photonics Journal
Subjects:
Online Access:https://ieeexplore.ieee.org/document/8039156/
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