GeSn Nanobeam Light-Emitting Diode as a GHz-Modulated Light Source
Designs and theoretical analysis are presented for a room temperature resonant-cavity-enhanced GeSn LED whose emission peaks at the 2 <inline-formula><tex-math notation="LaTeX">$\mu$</tex-math></inline-formula>m wavelength. The Ge/GeSn/Ge PIN hetero-diode of length...
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IEEE
2017-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/8039156/ |
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| author | Ricky Gibson Joshua Hendrickson Richard A. Soref |
| author_facet | Ricky Gibson Joshua Hendrickson Richard A. Soref |
| author_sort | Ricky Gibson |
| collection | DOAJ |
| description | Designs and theoretical analysis are presented for a room temperature resonant-cavity-enhanced GeSn LED whose emission peaks at the 2 <inline-formula><tex-math notation="LaTeX">$\mu$</tex-math></inline-formula>m wavelength. The Ge/GeSn/Ge PIN hetero-diode of length 1 <inline-formula><tex-math notation="LaTeX">$\mu$</tex-math></inline-formula>m is embedded in a rib-type Ge-on-Si nanobeam having either 24 or 36 air holes. The maximum LED modulation bandwidth <inline-formula><tex-math notation="LaTeX">$f_{3\text{dB}}$</tex-math></inline-formula> is proportional to the Purcell factor and is inversely proportional to <inline-formula><tex-math notation="LaTeX">$\tau _{s\,p0}$</tex-math> </inline-formula> the GeSn bulk spontaneous emission lifetime. For an emission linewidth of 200 nm and <inline-formula> <tex-math notation="LaTeX">$\tau _{s\,p0}$</tex-math></inline-formula> of 10 ns, an <inline-formula> <tex-math notation="LaTeX">$f_{3\text{dB}}$</tex-math></inline-formula> of 1.6 GHz is predicted. |
| format | Article |
| id | doaj-art-8ff3924846cd4210ad378cbbf3274bbd |
| institution | Kabale University |
| issn | 1943-0655 |
| language | English |
| publishDate | 2017-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-8ff3924846cd4210ad378cbbf3274bbd2025-08-20T03:32:57ZengIEEEIEEE Photonics Journal1943-06552017-01-019511110.1109/JPHOT.2017.27499608039156GeSn Nanobeam Light-Emitting Diode as a GHz-Modulated Light SourceRicky Gibson0Joshua Hendrickson1Richard A. Soref2University of Dayton Research Institute, Dayton, OH, USAAir Force Research Laboratory, Sensors Directorate, Wright-Patterson Air Force Base, OH, USADepartment of Engineering, University of Massachusetts Boston, Boston, MA, USADesigns and theoretical analysis are presented for a room temperature resonant-cavity-enhanced GeSn LED whose emission peaks at the 2 <inline-formula><tex-math notation="LaTeX">$\mu$</tex-math></inline-formula>m wavelength. The Ge/GeSn/Ge PIN hetero-diode of length 1 <inline-formula><tex-math notation="LaTeX">$\mu$</tex-math></inline-formula>m is embedded in a rib-type Ge-on-Si nanobeam having either 24 or 36 air holes. The maximum LED modulation bandwidth <inline-formula><tex-math notation="LaTeX">$f_{3\text{dB}}$</tex-math></inline-formula> is proportional to the Purcell factor and is inversely proportional to <inline-formula><tex-math notation="LaTeX">$\tau _{s\,p0}$</tex-math> </inline-formula> the GeSn bulk spontaneous emission lifetime. For an emission linewidth of 200 nm and <inline-formula> <tex-math notation="LaTeX">$\tau _{s\,p0}$</tex-math></inline-formula> of 10 ns, an <inline-formula> <tex-math notation="LaTeX">$f_{3\text{dB}}$</tex-math></inline-formula> of 1.6 GHz is predicted.https://ieeexplore.ieee.org/document/8039156/Light emitting diodeselectrooptic devicesphotonic crystals |
| spellingShingle | Ricky Gibson Joshua Hendrickson Richard A. Soref GeSn Nanobeam Light-Emitting Diode as a GHz-Modulated Light Source IEEE Photonics Journal Light emitting diodes electrooptic devices photonic crystals |
| title | GeSn Nanobeam Light-Emitting Diode as a GHz-Modulated Light Source |
| title_full | GeSn Nanobeam Light-Emitting Diode as a GHz-Modulated Light Source |
| title_fullStr | GeSn Nanobeam Light-Emitting Diode as a GHz-Modulated Light Source |
| title_full_unstemmed | GeSn Nanobeam Light-Emitting Diode as a GHz-Modulated Light Source |
| title_short | GeSn Nanobeam Light-Emitting Diode as a GHz-Modulated Light Source |
| title_sort | gesn nanobeam light emitting diode as a ghz modulated light source |
| topic | Light emitting diodes electrooptic devices photonic crystals |
| url | https://ieeexplore.ieee.org/document/8039156/ |
| work_keys_str_mv | AT rickygibson gesnnanobeamlightemittingdiodeasaghzmodulatedlightsource AT joshuahendrickson gesnnanobeamlightemittingdiodeasaghzmodulatedlightsource AT richardasoref gesnnanobeamlightemittingdiodeasaghzmodulatedlightsource |