Controllable Laser‐Induced Phase Transition in Multilayer 2H‐MoTe2 and its Raman Spectroscopy Study
Abstract Transition metal dichalcogenides (TMDCs) heterojunctions, with their atomically precise planar structures, enable the formation of smooth and well‐matched interfaces between different TMDCs components, effectively mitigating performance losses caused by lattice mismatches and rendering them...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-08-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202500064 |
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| author | Hao Chang Yang Yang Ruochen Zhang Qinghu Bai Xin Huang Lingyu Wan Junjie Li |
| author_facet | Hao Chang Yang Yang Ruochen Zhang Qinghu Bai Xin Huang Lingyu Wan Junjie Li |
| author_sort | Hao Chang |
| collection | DOAJ |
| description | Abstract Transition metal dichalcogenides (TMDCs) heterojunctions, with their atomically precise planar structures, enable the formation of smooth and well‐matched interfaces between different TMDCs components, effectively mitigating performance losses caused by lattice mismatches and rendering them highly suitable for applications in advanced devices, including 2D photodetectors, flexible light‐emitting diodes, high‐mobility field‐effect transistors, and solar cells. Lateral heterojunctions, owing to the covalent bonding between distinct phases, demonstrate high carrier mobility, significantly lowering the contact resistance at the interface. However, the fabrication of lateral TMDCs heterojunctions is limited by several factors, including randomness, interfacial quality, and process reproducibility. In this study, a straightforward laser irradiation method for inducing phase transitions in MoTe₂ is presented. By optimizing the laser power and exposure duration, multilayer 2H‐MoTe₂ encapsulated with h‐BN is successfully transformed into the 1T′ phase, as verified by Raman spectroscopy. Moreover, temperature‐dependent Raman spectroscopy is performed on the laser‐induced 1T′‐MoTe₂, which demonstrated the transformation into the Td phase at ≈230K, suggesting the high structural quality of the laser‐irradiated 1T′‐MoTe₂. These results demonstrate a practical approach for phase engineering of MoTe₂, providing valuable insights into the fabrication of lateral heterojunctions and their future applications in high‐performance photoelectric devices. |
| format | Article |
| id | doaj-art-8fe219724cf94125b952961804c278cd |
| institution | Kabale University |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-08-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-8fe219724cf94125b952961804c278cd2025-08-25T10:40:03ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-08-011113n/an/a10.1002/aelm.202500064Controllable Laser‐Induced Phase Transition in Multilayer 2H‐MoTe2 and its Raman Spectroscopy StudyHao Chang0Yang Yang1Ruochen Zhang2Qinghu Bai3Xin Huang4Lingyu Wan5Junjie Li6Center on Nanoenergy Research Guangxi Colleges and Universities Key Laboratory of Blue Energy and Systems Integration School of Physical Science & Technology Guangxi University Nanning 530004 ChinaBeijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 ChinaLaser Micro/Nano Fabrication Laboratory School of Mechanical Engineering Beijing Institute of Technology Beijing 100081 ChinaBeijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 ChinaBeijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 ChinaCenter on Nanoenergy Research Guangxi Colleges and Universities Key Laboratory of Blue Energy and Systems Integration School of Physical Science & Technology Guangxi University Nanning 530004 ChinaBeijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 ChinaAbstract Transition metal dichalcogenides (TMDCs) heterojunctions, with their atomically precise planar structures, enable the formation of smooth and well‐matched interfaces between different TMDCs components, effectively mitigating performance losses caused by lattice mismatches and rendering them highly suitable for applications in advanced devices, including 2D photodetectors, flexible light‐emitting diodes, high‐mobility field‐effect transistors, and solar cells. Lateral heterojunctions, owing to the covalent bonding between distinct phases, demonstrate high carrier mobility, significantly lowering the contact resistance at the interface. However, the fabrication of lateral TMDCs heterojunctions is limited by several factors, including randomness, interfacial quality, and process reproducibility. In this study, a straightforward laser irradiation method for inducing phase transitions in MoTe₂ is presented. By optimizing the laser power and exposure duration, multilayer 2H‐MoTe₂ encapsulated with h‐BN is successfully transformed into the 1T′ phase, as verified by Raman spectroscopy. Moreover, temperature‐dependent Raman spectroscopy is performed on the laser‐induced 1T′‐MoTe₂, which demonstrated the transformation into the Td phase at ≈230K, suggesting the high structural quality of the laser‐irradiated 1T′‐MoTe₂. These results demonstrate a practical approach for phase engineering of MoTe₂, providing valuable insights into the fabrication of lateral heterojunctions and their future applications in high‐performance photoelectric devices.https://doi.org/10.1002/aelm.202500064MoTe2laser irradiationphase transitionRaman spectroscopy |
| spellingShingle | Hao Chang Yang Yang Ruochen Zhang Qinghu Bai Xin Huang Lingyu Wan Junjie Li Controllable Laser‐Induced Phase Transition in Multilayer 2H‐MoTe2 and its Raman Spectroscopy Study Advanced Electronic Materials MoTe2 laser irradiation phase transition Raman spectroscopy |
| title | Controllable Laser‐Induced Phase Transition in Multilayer 2H‐MoTe2 and its Raman Spectroscopy Study |
| title_full | Controllable Laser‐Induced Phase Transition in Multilayer 2H‐MoTe2 and its Raman Spectroscopy Study |
| title_fullStr | Controllable Laser‐Induced Phase Transition in Multilayer 2H‐MoTe2 and its Raman Spectroscopy Study |
| title_full_unstemmed | Controllable Laser‐Induced Phase Transition in Multilayer 2H‐MoTe2 and its Raman Spectroscopy Study |
| title_short | Controllable Laser‐Induced Phase Transition in Multilayer 2H‐MoTe2 and its Raman Spectroscopy Study |
| title_sort | controllable laser induced phase transition in multilayer 2h mote2 and its raman spectroscopy study |
| topic | MoTe2 laser irradiation phase transition Raman spectroscopy |
| url | https://doi.org/10.1002/aelm.202500064 |
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