Digital Etching of Molybdenum Interconnects Using Plasma Oxidation

Digital Etching of Molybdenum Interconnects Using Plasma Oxidation

Abstract Molybdenum (Mo) has a high potential of becoming the material of choice for sub‐10 nm scale metal structures in future integrated circuits (ICs). Manufacturing at this scale requires exceptional precision and consistency, so many metal processing techniques must be reconsidered. In particul...

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Bibliographic Details
Main Authors: Ivan Erofeev, Antony Winata Hartanto, Muhaimin Mareum Khan, Kerong Deng, Krishna Kumar, Zainul Aabdin, Weng Weei Tjiu, Mingsheng Zhang, Antoine Pacco, Harold Philipsen, Angshuman Ray Chowdhuri, Han Vinh Huynh, Frank Holsteyns, Utkur Mirsaidov
Format: Article
Language:English
Published: Wiley-VCH 2025-01-01
Series:Advanced Materials Interfaces
Subjects:
atomic layer etching (ALE)
integrated circuits (ICs)
interconnects
metal etching
plasma oxidation
Online Access:https://doi.org/10.1002/admi.202400558
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