Simulation of Carrier Injection Efficiency in AlGaN-Based UV-Light-Emitting Diodes
Numerical simulations of carrier transport in aluminium gallium nitride based ultraviolet light emitting diodes (UV-LED) are performed in order to understand injection efficiency for light sources in the deep ultraviolet. With our simulator, calibrated with experimental data from a 265 nm UV-LED, qu...
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IEEE
2024-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/10602746/ |
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| author | Gregor Hofmann Anton Muhin Norman Susilo Friedhard Romer Tim Wernicke Michael Kneissl Bernd Witzigmann |
| author_facet | Gregor Hofmann Anton Muhin Norman Susilo Friedhard Romer Tim Wernicke Michael Kneissl Bernd Witzigmann |
| author_sort | Gregor Hofmann |
| collection | DOAJ |
| description | Numerical simulations of carrier transport in aluminium gallium nitride based ultraviolet light emitting diodes (UV-LED) are performed in order to understand injection efficiency for light sources in the deep ultraviolet. With our simulator, calibrated with experimental data from a 265 nm UV-LED, quantum efficiencies have been analyzed. The maximum internal quantum efficiency (IQE) of 30% consists of the product from radiative recombination efficiency (RRE) of 60% and carrier injection efficiency (CIE) of 50%. It is found that poor hole injection into the active region and a surplus of electrons limit both efficiencies, and leads to significant electron leakage into the p-side. This leakage is bias dependent, and has a minimum at maximum IQE. Further simulations show that distributed polarization doping (DPD) could improve carrier injection efficiency. |
| format | Article |
| id | doaj-art-8fb4e9fcb98648c29f760c7b63e03206 |
| institution | DOAJ |
| issn | 1943-0655 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
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| series | IEEE Photonics Journal |
| spelling | doaj-art-8fb4e9fcb98648c29f760c7b63e032062025-08-20T02:44:41ZengIEEEIEEE Photonics Journal1943-06552024-01-011641710.1109/JPHOT.2024.343048810602746Simulation of Carrier Injection Efficiency in AlGaN-Based UV-Light-Emitting DiodesGregor Hofmann0Anton Muhin1https://orcid.org/0000-0002-2389-0232Norman Susilo2https://orcid.org/0000-0002-5583-629XFriedhard Romer3https://orcid.org/0009-0001-5665-0083Tim Wernicke4Michael Kneissl5https://orcid.org/0000-0003-1476-598XBernd Witzigmann6https://orcid.org/0000-0001-9705-9516Department EEI, Lehrstuhl für Optoelektronik, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen, GermanyInstitut für Festkörperphysik, Technische Universität Berlin, Berlin, GermanyInstitut für Festkörperphysik, Technische Universität Berlin, Berlin, GermanyDepartment EEI, Lehrstuhl für Optoelektronik, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen, GermanyInstitut für Festkörperphysik, Technische Universität Berlin, Berlin, GermanyInstitut für Festkörperphysik, Technische Universität Berlin, Berlin, GermanyDepartment EEI, Lehrstuhl für Optoelektronik, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen, GermanyNumerical simulations of carrier transport in aluminium gallium nitride based ultraviolet light emitting diodes (UV-LED) are performed in order to understand injection efficiency for light sources in the deep ultraviolet. With our simulator, calibrated with experimental data from a 265 nm UV-LED, quantum efficiencies have been analyzed. The maximum internal quantum efficiency (IQE) of 30% consists of the product from radiative recombination efficiency (RRE) of 60% and carrier injection efficiency (CIE) of 50%. It is found that poor hole injection into the active region and a surplus of electrons limit both efficiencies, and leads to significant electron leakage into the p-side. This leakage is bias dependent, and has a minimum at maximum IQE. Further simulations show that distributed polarization doping (DPD) could improve carrier injection efficiency.https://ieeexplore.ieee.org/document/10602746/Efficiencygallium nitrideLEDlight emitting diodelight sourcemodeling |
| spellingShingle | Gregor Hofmann Anton Muhin Norman Susilo Friedhard Romer Tim Wernicke Michael Kneissl Bernd Witzigmann Simulation of Carrier Injection Efficiency in AlGaN-Based UV-Light-Emitting Diodes IEEE Photonics Journal Efficiency gallium nitride LED light emitting diode light source modeling |
| title | Simulation of Carrier Injection Efficiency in AlGaN-Based UV-Light-Emitting Diodes |
| title_full | Simulation of Carrier Injection Efficiency in AlGaN-Based UV-Light-Emitting Diodes |
| title_fullStr | Simulation of Carrier Injection Efficiency in AlGaN-Based UV-Light-Emitting Diodes |
| title_full_unstemmed | Simulation of Carrier Injection Efficiency in AlGaN-Based UV-Light-Emitting Diodes |
| title_short | Simulation of Carrier Injection Efficiency in AlGaN-Based UV-Light-Emitting Diodes |
| title_sort | simulation of carrier injection efficiency in algan based uv light emitting diodes |
| topic | Efficiency gallium nitride LED light emitting diode light source modeling |
| url | https://ieeexplore.ieee.org/document/10602746/ |
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