Hole Trap Formation in Quantum Dot Light‐Emitting Diodes Under Electrical Stress
Abstract Quantum dot light‐emitting diodes (QLEDs) have emerged as promising candidates for next‐generation display technology, but the limited lifetime of QLEDs hampers their further commercialization. Despite extensive research that has been conducted for the last decades, the mechanism leading to...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-03-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400231 |
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| author | Jiangxia Huang Wenxin Lin Shuxin Li Jiahao Li Haonan Feng Xiongfeng Lin Yulin Guo Wenlin Liang Longjia Wu Paul W. M. Blom Quan Niu Yuguang Ma |
| author_facet | Jiangxia Huang Wenxin Lin Shuxin Li Jiahao Li Haonan Feng Xiongfeng Lin Yulin Guo Wenlin Liang Longjia Wu Paul W. M. Blom Quan Niu Yuguang Ma |
| author_sort | Jiangxia Huang |
| collection | DOAJ |
| description | Abstract Quantum dot light‐emitting diodes (QLEDs) have emerged as promising candidates for next‐generation display technology, but the limited lifetime of QLEDs hampers their further commercialization. Despite extensive research that has been conducted for the last decades, the mechanism leading to the rapid degradation of QLEDs remains unclear. Here, the formation of hole traps is demonstrated as the critical reason for the degradation of QLEDs. Applying impedance measurements, an enhancement of the negative capacitance is observed and provides straightforward evidence for the formation of hole traps. The generated hole traps introduce additional trap‐assisted recombination of trapped holes with free electrons, as reflected by the evolution and voltage dependence of the electroluminescence spectra, leading to efficiency loss in degraded devices. By performing numerical simulations to model the degradation of QLEDs, the formation of hole traps is quantified as a function of aging time. The calculated hole trap density is consistent with that as measured from impedance spectroscopy, validating that the hole trap formation is the mechanism for the voltage drift and efficiency decrease of QLEDs under constant current stress. |
| format | Article |
| id | doaj-art-8f3121a5ac7a4a3794fe53d8a888a1e5 |
| institution | DOAJ |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-8f3121a5ac7a4a3794fe53d8a888a1e52025-08-20T02:47:46ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-03-01113n/an/a10.1002/aelm.202400231Hole Trap Formation in Quantum Dot Light‐Emitting Diodes Under Electrical StressJiangxia Huang0Wenxin Lin1Shuxin Li2Jiahao Li3Haonan Feng4Xiongfeng Lin5Yulin Guo6Wenlin Liang7Longjia Wu8Paul W. M. Blom9Quan Niu10Yuguang Ma11State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou Guangdong 510641 ChinaState Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou Guangdong 510641 ChinaState Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou Guangdong 510641 ChinaState Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou Guangdong 510641 ChinaState Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou Guangdong 510641 ChinaTCL Corporate Research Shenzhen Guangdong 518067 ChinaTCL Corporate Research Shenzhen Guangdong 518067 ChinaTCL Corporate Research Shenzhen Guangdong 518067 ChinaTCL Corporate Research Shenzhen Guangdong 518067 ChinaMax Planck Institute for Polymer Research Ackermannweg 10 55128 Mainz GermanyState Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou Guangdong 510641 ChinaState Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou Guangdong 510641 ChinaAbstract Quantum dot light‐emitting diodes (QLEDs) have emerged as promising candidates for next‐generation display technology, but the limited lifetime of QLEDs hampers their further commercialization. Despite extensive research that has been conducted for the last decades, the mechanism leading to the rapid degradation of QLEDs remains unclear. Here, the formation of hole traps is demonstrated as the critical reason for the degradation of QLEDs. Applying impedance measurements, an enhancement of the negative capacitance is observed and provides straightforward evidence for the formation of hole traps. The generated hole traps introduce additional trap‐assisted recombination of trapped holes with free electrons, as reflected by the evolution and voltage dependence of the electroluminescence spectra, leading to efficiency loss in degraded devices. By performing numerical simulations to model the degradation of QLEDs, the formation of hole traps is quantified as a function of aging time. The calculated hole trap density is consistent with that as measured from impedance spectroscopy, validating that the hole trap formation is the mechanism for the voltage drift and efficiency decrease of QLEDs under constant current stress.https://doi.org/10.1002/aelm.202400231blue quantum dot light‐emitting diodesdegradationhole trapsquantum dotsstability |
| spellingShingle | Jiangxia Huang Wenxin Lin Shuxin Li Jiahao Li Haonan Feng Xiongfeng Lin Yulin Guo Wenlin Liang Longjia Wu Paul W. M. Blom Quan Niu Yuguang Ma Hole Trap Formation in Quantum Dot Light‐Emitting Diodes Under Electrical Stress Advanced Electronic Materials blue quantum dot light‐emitting diodes degradation hole traps quantum dots stability |
| title | Hole Trap Formation in Quantum Dot Light‐Emitting Diodes Under Electrical Stress |
| title_full | Hole Trap Formation in Quantum Dot Light‐Emitting Diodes Under Electrical Stress |
| title_fullStr | Hole Trap Formation in Quantum Dot Light‐Emitting Diodes Under Electrical Stress |
| title_full_unstemmed | Hole Trap Formation in Quantum Dot Light‐Emitting Diodes Under Electrical Stress |
| title_short | Hole Trap Formation in Quantum Dot Light‐Emitting Diodes Under Electrical Stress |
| title_sort | hole trap formation in quantum dot light emitting diodes under electrical stress |
| topic | blue quantum dot light‐emitting diodes degradation hole traps quantum dots stability |
| url | https://doi.org/10.1002/aelm.202400231 |
| work_keys_str_mv | AT jiangxiahuang holetrapformationinquantumdotlightemittingdiodesunderelectricalstress AT wenxinlin holetrapformationinquantumdotlightemittingdiodesunderelectricalstress AT shuxinli holetrapformationinquantumdotlightemittingdiodesunderelectricalstress AT jiahaoli holetrapformationinquantumdotlightemittingdiodesunderelectricalstress AT haonanfeng holetrapformationinquantumdotlightemittingdiodesunderelectricalstress AT xiongfenglin holetrapformationinquantumdotlightemittingdiodesunderelectricalstress AT yulinguo holetrapformationinquantumdotlightemittingdiodesunderelectricalstress AT wenlinliang holetrapformationinquantumdotlightemittingdiodesunderelectricalstress AT longjiawu holetrapformationinquantumdotlightemittingdiodesunderelectricalstress AT paulwmblom holetrapformationinquantumdotlightemittingdiodesunderelectricalstress AT quanniu holetrapformationinquantumdotlightemittingdiodesunderelectricalstress AT yuguangma holetrapformationinquantumdotlightemittingdiodesunderelectricalstress |