Reconfigurable group delay with tunable topological edge state based on phase transitions material Ge2Sb2Te5 in dual-band
We investigate reconfigurable reflected group delay in dual-band of the photonic crystal heterostructure containing phase transitions material Ge2Sb2Te5 and graphene in mid-infrared region. The giant phase change of reflected beam derives from the topological edge state excited at the boundary surfa...
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| Format: | Article |
| Language: | English |
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Elsevier
2025-03-01
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| Series: | Results in Physics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379725000397 |
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| author | Yao Lu Qiaohong Yao Mengdong He Jiao Xu Yuxiang Peng |
| author_facet | Yao Lu Qiaohong Yao Mengdong He Jiao Xu Yuxiang Peng |
| author_sort | Yao Lu |
| collection | DOAJ |
| description | We investigate reconfigurable reflected group delay in dual-band of the photonic crystal heterostructure containing phase transitions material Ge2Sb2Te5 and graphene in mid-infrared region. The giant phase change of reflected beam derives from the topological edge state excited at the boundary surface of photonic crystal. Meanwhile, the tunable topological edge states can be satisfied by controlling the reversible switching between the crystalline and amorphous states of the Ge2Sb2Te5, which provides a flexible way to achieve configurable group delay in dual-band. Besides, the reflected group delay can be dynamically controlled by controlling Fermi energy, relaxation time of graphene and the incident angle. The reconfigurable reflected group delay in dual-band presented in this paper has the potential to be used in high-efficiency memory for optical pulses and optical delay lines. |
| format | Article |
| id | doaj-art-8f2ecab191f0454ab5f9b9c7a0121763 |
| institution | Kabale University |
| issn | 2211-3797 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj-art-8f2ecab191f0454ab5f9b9c7a01217632025-02-10T04:34:19ZengElsevierResults in Physics2211-37972025-03-0170108145Reconfigurable group delay with tunable topological edge state based on phase transitions material Ge2Sb2Te5 in dual-bandYao Lu0Qiaohong Yao1Mengdong He2Jiao Xu3Yuxiang Peng4Institute of Mathematics and Physics, Central South University of Forestry and Technology, Changsha 410004, ChinaInstitute of Mathematics and Physics, Central South University of Forestry and Technology, Changsha 410004, ChinaInstitute of Mathematics and Physics, Central South University of Forestry and Technology, Changsha 410004, ChinaSchool of Information Science and Engineering, Hunan Women’s University, Changsha 410004, China; Corresponding authors.Institute of Mathematics and Physics, Central South University of Forestry and Technology, Changsha 410004, China; Corresponding authors.We investigate reconfigurable reflected group delay in dual-band of the photonic crystal heterostructure containing phase transitions material Ge2Sb2Te5 and graphene in mid-infrared region. The giant phase change of reflected beam derives from the topological edge state excited at the boundary surface of photonic crystal. Meanwhile, the tunable topological edge states can be satisfied by controlling the reversible switching between the crystalline and amorphous states of the Ge2Sb2Te5, which provides a flexible way to achieve configurable group delay in dual-band. Besides, the reflected group delay can be dynamically controlled by controlling Fermi energy, relaxation time of graphene and the incident angle. The reconfigurable reflected group delay in dual-band presented in this paper has the potential to be used in high-efficiency memory for optical pulses and optical delay lines.http://www.sciencedirect.com/science/article/pii/S2211379725000397Reconfigurable group delayTopological edge statePhase transitions material |
| spellingShingle | Yao Lu Qiaohong Yao Mengdong He Jiao Xu Yuxiang Peng Reconfigurable group delay with tunable topological edge state based on phase transitions material Ge2Sb2Te5 in dual-band Results in Physics Reconfigurable group delay Topological edge state Phase transitions material |
| title | Reconfigurable group delay with tunable topological edge state based on phase transitions material Ge2Sb2Te5 in dual-band |
| title_full | Reconfigurable group delay with tunable topological edge state based on phase transitions material Ge2Sb2Te5 in dual-band |
| title_fullStr | Reconfigurable group delay with tunable topological edge state based on phase transitions material Ge2Sb2Te5 in dual-band |
| title_full_unstemmed | Reconfigurable group delay with tunable topological edge state based on phase transitions material Ge2Sb2Te5 in dual-band |
| title_short | Reconfigurable group delay with tunable topological edge state based on phase transitions material Ge2Sb2Te5 in dual-band |
| title_sort | reconfigurable group delay with tunable topological edge state based on phase transitions material ge2sb2te5 in dual band |
| topic | Reconfigurable group delay Topological edge state Phase transitions material |
| url | http://www.sciencedirect.com/science/article/pii/S2211379725000397 |
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