UV-A Sensor Based on 6H-SiC Schottky Photodiode
In this paper, we propose a UV-A sensor based on a 6H-SiC Schottky photodiode with a thin Ni<sub>2</sub>Si front electrode and an integrated hydrogenated silicon nitride (SiN:H) dielectric filter. 6H-SiC prototypes were fabricated by using a manufacturing process to a large extent alread...
Saved in:
| Main Authors: | Antonella Sciuto, Massimo Cataldo Mazzillo, Salvatore Di Franco, Giovanni Mannino, Paolo Badala, Lucio Renna, Corrado Caruso |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2017-01-01
|
| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7814212/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
4H-SiC SACM Avalanche Photodiode With Low Breakdown Voltage and High UV Detection Efficiency
by: Xiaolong Cai, et al.
Published: (2016-01-01) -
4H–SiC Avalanche Photodiode Linear Array Operating in Geiger Mode
by: Lianghui Li, et al.
Published: (2017-01-01) -
Investigation of Impact-Ionization-Enhanced Effect on SiC Thyristors Triggered by Weak UV Light
by: Yulei Zhang, et al.
Published: (2025-06-01) -
Schottky-Barrier Photodiode Internal Quantum Efficiency Dependence on Nickel Silicide Film Thickness
by: Joshua Duran, et al.
Published: (2019-01-01) -
Development of High voltage 4H-SiC Junction Barrier Schottky Diode with 3 300 V Blocking Voltage
by: PENG Zhaoyang, et al.
Published: (2016-01-01)