UV-A Sensor Based on 6H-SiC Schottky Photodiode
In this paper, we propose a UV-A sensor based on a 6H-SiC Schottky photodiode with a thin Ni<sub>2</sub>Si front electrode and an integrated hydrogenated silicon nitride (SiN:H) dielectric filter. 6H-SiC prototypes were fabricated by using a manufacturing process to a large extent alread...
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| Format: | Article |
| Language: | English |
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IEEE
2017-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/7814212/ |
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| _version_ | 1849706903803789312 |
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| author | Antonella Sciuto Massimo Cataldo Mazzillo Salvatore Di Franco Giovanni Mannino Paolo Badala Lucio Renna Corrado Caruso |
| author_facet | Antonella Sciuto Massimo Cataldo Mazzillo Salvatore Di Franco Giovanni Mannino Paolo Badala Lucio Renna Corrado Caruso |
| author_sort | Antonella Sciuto |
| collection | DOAJ |
| description | In this paper, we propose a UV-A sensor based on a 6H-SiC Schottky photodiode with a thin Ni<sub>2</sub>Si front electrode and an integrated hydrogenated silicon nitride (SiN:H) dielectric filter. 6H-SiC prototypes were fabricated by using a manufacturing process to a large extent already implemented on 4H-SiC poly-type for the realization of a high signal-to-noise ratio ultraviolet (UV) sensor already commercialized. The results obtained on 6H-SiC prototypes show optimal electrical performance with dark current density lower than 0.2 nA/cm<sup>2</sup> at room temperature and 10 V reverse bias. The use of 6H polytype allows shifting of the UV sensor response from 290 nm peak responsivity wavelength measured on standard 4H-SiC photodiodes to 360 nm wavelength in 6H-SiC prototypes with an integrated SiN:H filter exactly in the middle of the UV-A band (320–400 nm) with a simultaneous consistent reduction of the optical response in UV-C and UV-B regions below 320 nm wavelength. |
| format | Article |
| id | doaj-art-8f294367b0a2425bbb908e1c61829388 |
| institution | DOAJ |
| issn | 1943-0655 |
| language | English |
| publishDate | 2017-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-8f294367b0a2425bbb908e1c618293882025-08-20T03:16:04ZengIEEEIEEE Photonics Journal1943-06552017-01-019111010.1109/JPHOT.2017.26515857814212UV-A Sensor Based on 6H-SiC Schottky PhotodiodeAntonella Sciuto0Massimo Cataldo Mazzillo1Salvatore Di Franco2Giovanni Mannino3Paolo Badala4Lucio Renna5Corrado Caruso6CNR-IMM, Catania, ItalySTMicroelectronics, Catania, ItalyCNR-IMM, Catania, ItalyCNR-IMM, Catania, ItalySTMicroelectronics, Catania, ItalySTMicroelectronics, Catania, ItalySTMicroelectronics, Catania, ItalyIn this paper, we propose a UV-A sensor based on a 6H-SiC Schottky photodiode with a thin Ni<sub>2</sub>Si front electrode and an integrated hydrogenated silicon nitride (SiN:H) dielectric filter. 6H-SiC prototypes were fabricated by using a manufacturing process to a large extent already implemented on 4H-SiC poly-type for the realization of a high signal-to-noise ratio ultraviolet (UV) sensor already commercialized. The results obtained on 6H-SiC prototypes show optimal electrical performance with dark current density lower than 0.2 nA/cm<sup>2</sup> at room temperature and 10 V reverse bias. The use of 6H polytype allows shifting of the UV sensor response from 290 nm peak responsivity wavelength measured on standard 4H-SiC photodiodes to 360 nm wavelength in 6H-SiC prototypes with an integrated SiN:H filter exactly in the middle of the UV-A band (320–400 nm) with a simultaneous consistent reduction of the optical response in UV-C and UV-B regions below 320 nm wavelength.https://ieeexplore.ieee.org/document/7814212/6H-SiCultraviolet (UV)UV-A sensorSiN:H filterSchottky photodiode. |
| spellingShingle | Antonella Sciuto Massimo Cataldo Mazzillo Salvatore Di Franco Giovanni Mannino Paolo Badala Lucio Renna Corrado Caruso UV-A Sensor Based on 6H-SiC Schottky Photodiode IEEE Photonics Journal 6H-SiC ultraviolet (UV) UV-A sensor SiN:H filter Schottky photodiode. |
| title | UV-A Sensor Based on 6H-SiC Schottky Photodiode |
| title_full | UV-A Sensor Based on 6H-SiC Schottky Photodiode |
| title_fullStr | UV-A Sensor Based on 6H-SiC Schottky Photodiode |
| title_full_unstemmed | UV-A Sensor Based on 6H-SiC Schottky Photodiode |
| title_short | UV-A Sensor Based on 6H-SiC Schottky Photodiode |
| title_sort | uv a sensor based on 6h sic schottky photodiode |
| topic | 6H-SiC ultraviolet (UV) UV-A sensor SiN:H filter Schottky photodiode. |
| url | https://ieeexplore.ieee.org/document/7814212/ |
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