UV-A Sensor Based on 6H-SiC Schottky Photodiode
In this paper, we propose a UV-A sensor based on a 6H-SiC Schottky photodiode with a thin Ni<sub>2</sub>Si front electrode and an integrated hydrogenated silicon nitride (SiN:H) dielectric filter. 6H-SiC prototypes were fabricated by using a manufacturing process to a large extent alread...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2017-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7814212/ |
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| Summary: | In this paper, we propose a UV-A sensor based on a 6H-SiC Schottky photodiode with a thin Ni<sub>2</sub>Si front electrode and an integrated hydrogenated silicon nitride (SiN:H) dielectric filter. 6H-SiC prototypes were fabricated by using a manufacturing process to a large extent already implemented on 4H-SiC poly-type for the realization of a high signal-to-noise ratio ultraviolet (UV) sensor already commercialized. The results obtained on 6H-SiC prototypes show optimal electrical performance with dark current density lower than 0.2 nA/cm<sup>2</sup> at room temperature and 10 V reverse bias. The use of 6H polytype allows shifting of the UV sensor response from 290 nm peak responsivity wavelength measured on standard 4H-SiC photodiodes to 360 nm wavelength in 6H-SiC prototypes with an integrated SiN:H filter exactly in the middle of the UV-A band (320–400 nm) with a simultaneous consistent reduction of the optical response in UV-C and UV-B regions below 320 nm wavelength. |
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| ISSN: | 1943-0655 |