Buried-stressor technology for the epitaxial growth and device integration of site-controlled quantum dots
Semiconductor quantum dots (QDs) are high-quality nanocrystals that provide three-dimensional carrier confinement on the scale of the de Broglie wavelength. This makes them ideal candidates as light emitters, especially in the emerging field of photonic quantum technologies, where they can act as qu...
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IOP Publishing
2025-01-01
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| Series: | Materials for Quantum Technology |
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| Online Access: | https://doi.org/10.1088/2633-4356/add3ad |
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| author | Kartik Gaur Priyabrata Mudi Petr Klenovsky Stephan Reitzenstein |
| author_facet | Kartik Gaur Priyabrata Mudi Petr Klenovsky Stephan Reitzenstein |
| author_sort | Kartik Gaur |
| collection | DOAJ |
| description | Semiconductor quantum dots (QDs) are high-quality nanocrystals that provide three-dimensional carrier confinement on the scale of the de Broglie wavelength. This makes them ideal candidates as light emitters, especially in the emerging field of photonic quantum technologies, where they can act as quantum light sources. However, their self-assembled epitaxial growth leads to randomness in position and emission wavelength, which hinders their scalable integration into photonic quantum devices. This review summarizes and highlights advances in the site-controlled growth of high-quality epitaxial QDs, with a particular focus on the buried stressor concept. Compared to other QD positioning techniques based for instance on nanohole arrays, nanowire arrays, and arrays of inverted pyramids as dot nucleation centers, the buried stressor growth method is distinguished by its ability to achieve not only spatial accuracy and precision, but also control of the local QD density in combination in an industry-compatible process flow. Therefore, the buried stressor growth technique is highly suitable for the development of both QD-based quantum light sources and microlasers. The buried stressor site-controlled QD growth technique involves the sub-surface embedding of a nano-engineered stressor material, which generates localized strain fields at the growth surface that control the nucleation of QDs. We provide an in-depth review of the underlying mechanisms and technological implementations, and discuss the differences and comparative advantages of the buried stressor method over other techniques for site-controlled growth of QDs. We also address persistent challenges, such as scalability and integration with existing semiconductor technologies, and outline potential future research directions. |
| format | Article |
| id | doaj-art-8f008f0f70eb4b89bd01005f1950da90 |
| institution | OA Journals |
| issn | 2633-4356 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials for Quantum Technology |
| spelling | doaj-art-8f008f0f70eb4b89bd01005f1950da902025-08-20T01:50:11ZengIOP PublishingMaterials for Quantum Technology2633-43562025-01-015202200210.1088/2633-4356/add3adBuried-stressor technology for the epitaxial growth and device integration of site-controlled quantum dotsKartik Gaur0https://orcid.org/0009-0008-1580-135XPriyabrata Mudi1https://orcid.org/0009-0003-3806-2047Petr Klenovsky2https://orcid.org/0000-0003-1914-164XStephan Reitzenstein3https://orcid.org/0000-0002-1381-9838Institut für Physik und Astronomie, Technische Universität Berlin , Hardenbergstraße 36, D-10623 Berlin, GermanyInstitut für Physik und Astronomie, Technische Universität Berlin , Hardenbergstraße 36, D-10623 Berlin, GermanyDepartment of Condensed Matter Physics, Masaryk University , Kotlářská 267/2, 611 37 Brno, Czech Republic; Czech Metrology Institute , Okružní 31, 63800 Brno, Czech RepublicInstitut für Physik und Astronomie, Technische Universität Berlin , Hardenbergstraße 36, D-10623 Berlin, GermanySemiconductor quantum dots (QDs) are high-quality nanocrystals that provide three-dimensional carrier confinement on the scale of the de Broglie wavelength. This makes them ideal candidates as light emitters, especially in the emerging field of photonic quantum technologies, where they can act as quantum light sources. However, their self-assembled epitaxial growth leads to randomness in position and emission wavelength, which hinders their scalable integration into photonic quantum devices. This review summarizes and highlights advances in the site-controlled growth of high-quality epitaxial QDs, with a particular focus on the buried stressor concept. Compared to other QD positioning techniques based for instance on nanohole arrays, nanowire arrays, and arrays of inverted pyramids as dot nucleation centers, the buried stressor growth method is distinguished by its ability to achieve not only spatial accuracy and precision, but also control of the local QD density in combination in an industry-compatible process flow. Therefore, the buried stressor growth technique is highly suitable for the development of both QD-based quantum light sources and microlasers. The buried stressor site-controlled QD growth technique involves the sub-surface embedding of a nano-engineered stressor material, which generates localized strain fields at the growth surface that control the nucleation of QDs. We provide an in-depth review of the underlying mechanisms and technological implementations, and discuss the differences and comparative advantages of the buried stressor method over other techniques for site-controlled growth of QDs. We also address persistent challenges, such as scalability and integration with existing semiconductor technologies, and outline potential future research directions.https://doi.org/10.1088/2633-4356/add3adquantum dotsite controlpositioningepitaxial growthburied stressorquantum light sources |
| spellingShingle | Kartik Gaur Priyabrata Mudi Petr Klenovsky Stephan Reitzenstein Buried-stressor technology for the epitaxial growth and device integration of site-controlled quantum dots Materials for Quantum Technology quantum dot site control positioning epitaxial growth buried stressor quantum light sources |
| title | Buried-stressor technology for the epitaxial growth and device integration of site-controlled quantum dots |
| title_full | Buried-stressor technology for the epitaxial growth and device integration of site-controlled quantum dots |
| title_fullStr | Buried-stressor technology for the epitaxial growth and device integration of site-controlled quantum dots |
| title_full_unstemmed | Buried-stressor technology for the epitaxial growth and device integration of site-controlled quantum dots |
| title_short | Buried-stressor technology for the epitaxial growth and device integration of site-controlled quantum dots |
| title_sort | buried stressor technology for the epitaxial growth and device integration of site controlled quantum dots |
| topic | quantum dot site control positioning epitaxial growth buried stressor quantum light sources |
| url | https://doi.org/10.1088/2633-4356/add3ad |
| work_keys_str_mv | AT kartikgaur buriedstressortechnologyfortheepitaxialgrowthanddeviceintegrationofsitecontrolledquantumdots AT priyabratamudi buriedstressortechnologyfortheepitaxialgrowthanddeviceintegrationofsitecontrolledquantumdots AT petrklenovsky buriedstressortechnologyfortheepitaxialgrowthanddeviceintegrationofsitecontrolledquantumdots AT stephanreitzenstein buriedstressortechnologyfortheepitaxialgrowthanddeviceintegrationofsitecontrolledquantumdots |