The Analogue Design Research of Precursor Gas Flow Field in the Deposition Chamber for Aluminide Coating Device Deposited by the CVD Method
For preparing the uniform CVD aluminide coating, the flow field distribution uniformity of precursor gas in the deposition chamber ought to be controlled. In this work, the computational fluid dynamics (CFD) method was applied to conduct analogue simulation on the precursor fluid flow field in the d...
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Editorial Department of Materials Protection
2021-05-01
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| Series: | Cailiao Baohu |
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| Online Access: | http://www.mat-pro.com/fileup/1001-1560/PDF/20210501.pdf |
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| author | ZHANG Bo - wen, WU Yong, YANG Fu, HUANG Tian - zong, MENG Shi - xu, ZHAO Zhi - xin |
| author_facet | ZHANG Bo - wen, WU Yong, YANG Fu, HUANG Tian - zong, MENG Shi - xu, ZHAO Zhi - xin |
| author_sort | ZHANG Bo - wen, WU Yong, YANG Fu, HUANG Tian - zong, MENG Shi - xu, ZHAO Zhi - xin |
| collection | DOAJ |
| description | For preparing the uniform CVD aluminide coating, the flow field distribution uniformity of precursor gas in the deposition chamber ought to be controlled. In this work, the computational fluid dynamics (CFD) method was applied to conduct analogue simulation on the precursor fluid flow field in the deposition chamber. The flow field distribution transformations of the CVD deposition chamber equipped with the A, B, and C gas distribution devices were compared. In addition, the flow field distribution transformations of the deposition chambers were compared when the inlet velocity was raised 1.5 times, 2 times, 2.5 times and 5 times of the empirical velocity (ve), respectively. Results showed that choosing the B gas distribution device could ensure precursor gas uniformly to flow from gas port to the chamber and to be heated fully. When the maximum velocity of precursor was in the range of 2.0 ve～2.5 ve, the uniformity of the precursor gas flow field and temperature distribution in the deposition chamber were effectively obtained. Furthermore, the gas distribution device of CVD deposition chamber was designed under the guidance of this result, and the influences on gas flow field uniformity with raising the velocity of precursor gas were discussed. |
| format | Article |
| id | doaj-art-8ec5da5ab7fa4c06996a02669bc44cf1 |
| institution | Kabale University |
| issn | 1001-1560 |
| language | zho |
| publishDate | 2021-05-01 |
| publisher | Editorial Department of Materials Protection |
| record_format | Article |
| series | Cailiao Baohu |
| spelling | doaj-art-8ec5da5ab7fa4c06996a02669bc44cf12025-08-20T03:50:21ZzhoEditorial Department of Materials ProtectionCailiao Baohu1001-15602021-05-015451610.16577/j.cnki.42-1215/tb.2021.05.001The Analogue Design Research of Precursor Gas Flow Field in the Deposition Chamber for Aluminide Coating Device Deposited by the CVD MethodZHANG Bo - wen, WU Yong, YANG Fu, HUANG Tian - zong, MENG Shi - xu, ZHAO Zhi - xin0(1. Wuhan Research Institute of Materials Protection, Wuhan 430030, China;2. State Key Laboratory of Special Surface Protection Materials and Application Technology，Wuhan 430030, China；3. School of Materials Science and Engineering, Wuhan University of Technology，Wuhan 430070, China)For preparing the uniform CVD aluminide coating, the flow field distribution uniformity of precursor gas in the deposition chamber ought to be controlled. In this work, the computational fluid dynamics (CFD) method was applied to conduct analogue simulation on the precursor fluid flow field in the deposition chamber. The flow field distribution transformations of the CVD deposition chamber equipped with the A, B, and C gas distribution devices were compared. In addition, the flow field distribution transformations of the deposition chambers were compared when the inlet velocity was raised 1.5 times, 2 times, 2.5 times and 5 times of the empirical velocity (ve), respectively. Results showed that choosing the B gas distribution device could ensure precursor gas uniformly to flow from gas port to the chamber and to be heated fully. When the maximum velocity of precursor was in the range of 2.0 ve～2.5 ve, the uniformity of the precursor gas flow field and temperature distribution in the deposition chamber were effectively obtained. Furthermore, the gas distribution device of CVD deposition chamber was designed under the guidance of this result, and the influences on gas flow field uniformity with raising the velocity of precursor gas were discussed.http://www.mat-pro.com/fileup/1001-1560/PDF/20210501.pdfcvd; aluminide coating; computational fluid dynamics; analogue design |
| spellingShingle | ZHANG Bo - wen, WU Yong, YANG Fu, HUANG Tian - zong, MENG Shi - xu, ZHAO Zhi - xin The Analogue Design Research of Precursor Gas Flow Field in the Deposition Chamber for Aluminide Coating Device Deposited by the CVD Method Cailiao Baohu cvd; aluminide coating; computational fluid dynamics; analogue design |
| title | The Analogue Design Research of Precursor Gas Flow Field in the Deposition Chamber for Aluminide Coating Device Deposited by the CVD Method |
| title_full | The Analogue Design Research of Precursor Gas Flow Field in the Deposition Chamber for Aluminide Coating Device Deposited by the CVD Method |
| title_fullStr | The Analogue Design Research of Precursor Gas Flow Field in the Deposition Chamber for Aluminide Coating Device Deposited by the CVD Method |
| title_full_unstemmed | The Analogue Design Research of Precursor Gas Flow Field in the Deposition Chamber for Aluminide Coating Device Deposited by the CVD Method |
| title_short | The Analogue Design Research of Precursor Gas Flow Field in the Deposition Chamber for Aluminide Coating Device Deposited by the CVD Method |
| title_sort | analogue design research of precursor gas flow field in the deposition chamber for aluminide coating device deposited by the cvd method |
| topic | cvd; aluminide coating; computational fluid dynamics; analogue design |
| url | http://www.mat-pro.com/fileup/1001-1560/PDF/20210501.pdf |
| work_keys_str_mv | AT zhangbowenwuyongyangfuhuangtianzongmengshixuzhaozhixin theanaloguedesignresearchofprecursorgasflowfieldinthedepositionchamberforaluminidecoatingdevicedepositedbythecvdmethod AT zhangbowenwuyongyangfuhuangtianzongmengshixuzhaozhixin analoguedesignresearchofprecursorgasflowfieldinthedepositionchamberforaluminidecoatingdevicedepositedbythecvdmethod |