The Analogue Design Research of Precursor Gas Flow Field in the Deposition Chamber for Aluminide Coating Device Deposited by the CVD Method
For preparing the uniform CVD aluminide coating, the flow field distribution uniformity of precursor gas in the deposition chamber ought to be controlled. In this work, the computational fluid dynamics (CFD) method was applied to conduct analogue simulation on the precursor fluid flow field in the d...
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Department of Materials Protection
2021-05-01
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| Series: | Cailiao Baohu |
| Subjects: | |
| Online Access: | http://www.mat-pro.com/fileup/1001-1560/PDF/20210501.pdf |
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| Summary: | For preparing the uniform CVD aluminide coating, the flow field distribution uniformity of precursor gas in the deposition chamber ought to be controlled. In this work, the computational fluid dynamics (CFD) method was applied to conduct analogue simulation on the precursor fluid flow field in the deposition chamber. The flow field distribution transformations of the CVD deposition chamber equipped with the A, B, and C gas distribution devices were compared. In addition, the flow field distribution transformations of the deposition chambers were compared when the inlet velocity was raised 1.5 times, 2 times, 2.5 times and 5 times of the empirical velocity (ve), respectively. Results showed that choosing the B gas distribution device could ensure precursor gas uniformly to flow from gas port to the chamber and to be heated fully. When the maximum velocity of precursor was in the range of 2.0 ve～2.5 ve, the uniformity of the precursor gas flow field and temperature distribution in the deposition chamber were effectively obtained. Furthermore, the gas distribution device of CVD deposition chamber was designed under the guidance of this result, and the influences on gas flow field uniformity with raising the velocity of precursor gas were discussed. |
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| ISSN: | 1001-1560 |