GeTe/Sb2Te3 Super‐Lattices: Impact of Atomic Structure on the RESET Current of Phase‐Change Memory Devices
Abstract Phase change memories (PCMs) are at the heart of modern memory technology, offering multi‐level storage, fast read/write operations, and non‐volatility, bridging the gap between volatile DRAM and non‐volatile Flash. The reversible transition between amorphous and crystalline states of phase...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-02-01
|
| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400290 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849718558270947328 |
|---|---|
| author | Damien Térébénec Françoise Hippert Nicolas Bernier Niccolo Castellani Pierre Noé |
| author_facet | Damien Térébénec Françoise Hippert Nicolas Bernier Niccolo Castellani Pierre Noé |
| author_sort | Damien Térébénec |
| collection | DOAJ |
| description | Abstract Phase change memories (PCMs) are at the heart of modern memory technology, offering multi‐level storage, fast read/write operations, and non‐volatility, bridging the gap between volatile DRAM and non‐volatile Flash. The reversible transition between amorphous and crystalline states of phase‐change materials such as GeTe or Ge2Sb2Te5 is at the basis of PCM devices. Despite their importance, PCM devices face challenges including high power consumption during the RESET operation. Current research efforts focus on improving device architecture and exploring alternative phase‐change materials such as GeTe/Sb2Te3 super‐lattices (SLs), for which a reduced programming power consumption is observed compared with standard PCMs. Herein, by combining X‐ray diffraction and scanning transmission electron microscopy imaging of SL thin films with the study of the same SL in PCM devices, it is shown that it is possible to significantly decrease RESET energy of the device, without modifying the SL composition, by reducing the amount of structural defects through annealing treatment. The best device properties are obtained after transforming the SL into a defect‐free, highly out‐of‐plane oriented rhombohedral phase. These results offer a promising avenue for further improving the performance of SL‐based PCM devices through structural optimization. |
| format | Article |
| id | doaj-art-8e0d093cba0a4ffcaf90b12de6b3340a |
| institution | DOAJ |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-8e0d093cba0a4ffcaf90b12de6b3340a2025-08-20T03:12:20ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-02-01112n/an/a10.1002/aelm.202400290GeTe/Sb2Te3 Super‐Lattices: Impact of Atomic Structure on the RESET Current of Phase‐Change Memory DevicesDamien Térébénec0Françoise Hippert1Nicolas Bernier2Niccolo Castellani3Pierre Noé4Université Grenoble Alpes CEA, LETI Grenoble F‐38000 FranceUniversité Grenoble Alpes CNRS, Grenoble INP, LMGP Grenoble F‐38000 FranceUniversité Grenoble Alpes CEA, LETI Grenoble F‐38000 FranceUniversité Grenoble Alpes CEA, LETI Grenoble F‐38000 FranceUniversité Grenoble Alpes CEA, LETI Grenoble F‐38000 FranceAbstract Phase change memories (PCMs) are at the heart of modern memory technology, offering multi‐level storage, fast read/write operations, and non‐volatility, bridging the gap between volatile DRAM and non‐volatile Flash. The reversible transition between amorphous and crystalline states of phase‐change materials such as GeTe or Ge2Sb2Te5 is at the basis of PCM devices. Despite their importance, PCM devices face challenges including high power consumption during the RESET operation. Current research efforts focus on improving device architecture and exploring alternative phase‐change materials such as GeTe/Sb2Te3 super‐lattices (SLs), for which a reduced programming power consumption is observed compared with standard PCMs. Herein, by combining X‐ray diffraction and scanning transmission electron microscopy imaging of SL thin films with the study of the same SL in PCM devices, it is shown that it is possible to significantly decrease RESET energy of the device, without modifying the SL composition, by reducing the amount of structural defects through annealing treatment. The best device properties are obtained after transforming the SL into a defect‐free, highly out‐of‐plane oriented rhombohedral phase. These results offer a promising avenue for further improving the performance of SL‐based PCM devices through structural optimization.https://doi.org/10.1002/aelm.202400290atomic structuredevicesphase‐change memorysuper‐latticeTEM |
| spellingShingle | Damien Térébénec Françoise Hippert Nicolas Bernier Niccolo Castellani Pierre Noé GeTe/Sb2Te3 Super‐Lattices: Impact of Atomic Structure on the RESET Current of Phase‐Change Memory Devices Advanced Electronic Materials atomic structure devices phase‐change memory super‐lattice TEM |
| title | GeTe/Sb2Te3 Super‐Lattices: Impact of Atomic Structure on the RESET Current of Phase‐Change Memory Devices |
| title_full | GeTe/Sb2Te3 Super‐Lattices: Impact of Atomic Structure on the RESET Current of Phase‐Change Memory Devices |
| title_fullStr | GeTe/Sb2Te3 Super‐Lattices: Impact of Atomic Structure on the RESET Current of Phase‐Change Memory Devices |
| title_full_unstemmed | GeTe/Sb2Te3 Super‐Lattices: Impact of Atomic Structure on the RESET Current of Phase‐Change Memory Devices |
| title_short | GeTe/Sb2Te3 Super‐Lattices: Impact of Atomic Structure on the RESET Current of Phase‐Change Memory Devices |
| title_sort | gete sb2te3 super lattices impact of atomic structure on the reset current of phase change memory devices |
| topic | atomic structure devices phase‐change memory super‐lattice TEM |
| url | https://doi.org/10.1002/aelm.202400290 |
| work_keys_str_mv | AT damienterebenec getesb2te3superlatticesimpactofatomicstructureontheresetcurrentofphasechangememorydevices AT francoisehippert getesb2te3superlatticesimpactofatomicstructureontheresetcurrentofphasechangememorydevices AT nicolasbernier getesb2te3superlatticesimpactofatomicstructureontheresetcurrentofphasechangememorydevices AT niccolocastellani getesb2te3superlatticesimpactofatomicstructureontheresetcurrentofphasechangememorydevices AT pierrenoe getesb2te3superlatticesimpactofatomicstructureontheresetcurrentofphasechangememorydevices |