Piezoelectric Layer Transfer Process for MEMS
Piezoelectric MEMS devices were fabricated on 200 mm Si wafers using both deposited and layer-transferred PZT films. In both cases, the PZT-based devices showed ferroelectric and piezoelectric properties at the level of current state-of-the-art devices. The wafer-to-wafer piezoelectric layer transfe...
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MDPI AG
2024-03-01
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| Online Access: | https://www.mdpi.com/2504-3900/97/1/114 |
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| author | Gwenael Le Rhun Franklin Pavageau Timothée Rotrou Christel Dieppedale Laurent Mollard |
| author_facet | Gwenael Le Rhun Franklin Pavageau Timothée Rotrou Christel Dieppedale Laurent Mollard |
| author_sort | Gwenael Le Rhun |
| collection | DOAJ |
| description | Piezoelectric MEMS devices were fabricated on 200 mm Si wafers using both deposited and layer-transferred PZT films. In both cases, the PZT-based devices showed ferroelectric and piezoelectric properties at the level of current state-of-the-art devices. The wafer-to-wafer piezoelectric layer transfer process that was developed can thus be useful to bypass the thermal budgeting issue associated with the high crystallization temperature of PZT (~700 °C). It allows the integration of PZT capacitors on any kind of layer stack or substrate, for either actuator or sensor applications. |
| format | Article |
| id | doaj-art-8e087efbe051476f9354ec8ffd1b46ee |
| institution | OA Journals |
| issn | 2504-3900 |
| language | English |
| publishDate | 2024-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Proceedings |
| spelling | doaj-art-8e087efbe051476f9354ec8ffd1b46ee2025-08-20T02:01:21ZengMDPI AGProceedings2504-39002024-03-0197111410.3390/proceedings2024097114Piezoelectric Layer Transfer Process for MEMSGwenael Le Rhun0Franklin Pavageau1Timothée Rotrou2Christel Dieppedale3Laurent Mollard4CEA-Leti, Univ. Grenoble Alpes, F-38000 Grenoble, FranceCEA-Leti, Univ. Grenoble Alpes, F-38000 Grenoble, FranceCEA-Leti, Univ. Grenoble Alpes, F-38000 Grenoble, FranceCEA-Leti, Univ. Grenoble Alpes, F-38000 Grenoble, FranceCEA-Leti, Univ. Grenoble Alpes, F-38000 Grenoble, FrancePiezoelectric MEMS devices were fabricated on 200 mm Si wafers using both deposited and layer-transferred PZT films. In both cases, the PZT-based devices showed ferroelectric and piezoelectric properties at the level of current state-of-the-art devices. The wafer-to-wafer piezoelectric layer transfer process that was developed can thus be useful to bypass the thermal budgeting issue associated with the high crystallization temperature of PZT (~700 °C). It allows the integration of PZT capacitors on any kind of layer stack or substrate, for either actuator or sensor applications.https://www.mdpi.com/2504-3900/97/1/114MEMSactuatorsensorpiezoelectricfilm transfer |
| spellingShingle | Gwenael Le Rhun Franklin Pavageau Timothée Rotrou Christel Dieppedale Laurent Mollard Piezoelectric Layer Transfer Process for MEMS Proceedings MEMS actuator sensor piezoelectric film transfer |
| title | Piezoelectric Layer Transfer Process for MEMS |
| title_full | Piezoelectric Layer Transfer Process for MEMS |
| title_fullStr | Piezoelectric Layer Transfer Process for MEMS |
| title_full_unstemmed | Piezoelectric Layer Transfer Process for MEMS |
| title_short | Piezoelectric Layer Transfer Process for MEMS |
| title_sort | piezoelectric layer transfer process for mems |
| topic | MEMS actuator sensor piezoelectric film transfer |
| url | https://www.mdpi.com/2504-3900/97/1/114 |
| work_keys_str_mv | AT gwenaellerhun piezoelectriclayertransferprocessformems AT franklinpavageau piezoelectriclayertransferprocessformems AT timotheerotrou piezoelectriclayertransferprocessformems AT christeldieppedale piezoelectriclayertransferprocessformems AT laurentmollard piezoelectriclayertransferprocessformems |