Piezoelectric Layer Transfer Process for MEMS
Piezoelectric MEMS devices were fabricated on 200 mm Si wafers using both deposited and layer-transferred PZT films. In both cases, the PZT-based devices showed ferroelectric and piezoelectric properties at the level of current state-of-the-art devices. The wafer-to-wafer piezoelectric layer transfe...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-03-01
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| Series: | Proceedings |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2504-3900/97/1/114 |
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| Summary: | Piezoelectric MEMS devices were fabricated on 200 mm Si wafers using both deposited and layer-transferred PZT films. In both cases, the PZT-based devices showed ferroelectric and piezoelectric properties at the level of current state-of-the-art devices. The wafer-to-wafer piezoelectric layer transfer process that was developed can thus be useful to bypass the thermal budgeting issue associated with the high crystallization temperature of PZT (~700 °C). It allows the integration of PZT capacitors on any kind of layer stack or substrate, for either actuator or sensor applications. |
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| ISSN: | 2504-3900 |