Impact of Self-Heating Effect on DC and AC Performance of FD-SOI CMOS Inverter
We analyzed the impact of self-heating effect (SHE) on fully depleted-silicon on insulator (FD-SOI) CMOS inverter at the 28 nm technology node, considering both DC and AC operations. Specifically, we focused on investigating the principles behind how SHE influences inverter operating characteristics...
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2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10816664/ |
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| author | Kang Hee Lee Mincheol Kim Jongmin Lee Jang Hyun Kim |
| author_facet | Kang Hee Lee Mincheol Kim Jongmin Lee Jang Hyun Kim |
| author_sort | Kang Hee Lee |
| collection | DOAJ |
| description | We analyzed the impact of self-heating effect (SHE) on fully depleted-silicon on insulator (FD-SOI) CMOS inverter at the 28 nm technology node, considering both DC and AC operations. Specifically, we focused on investigating the principles behind how SHE influences inverter operating characteristics. To analyze the operating characteristics, we employed 2-D technology computer-aided design (TCAD) mixed mode simulation by Synopsys SentaurusTM. In DC operation, the maximum lattice temperature for n-MOSFET and p-MOSFET are 436 K and 449 K, respectively, resulting in a current degradation of 7.9%. Due to the shifted p/n ratio, the gain also varied, with values of 3.65 V/V for without SHE and 4.21 V/V for with SHE. In AC operation, the maximum temperature varies for each operating frequency: 439 K, 358 K, 324 K, and 319 K, from 10 MHz to 4 GHz. Consequently, the rate of p/n ratio deviation and the rate of voltage change over time vary accordingly. SHE exhibits a faster rate of change, showing a difference of 5.43% at 10 MHz. Analysis of propagation delay through an inverter chain showed a 10% increase at 10 MHz. The results indicate that with SHE, the propagation delay increases, and the slew rate becomes steeper, suggesting improved switching characteristics and gain. However, this unintended consequence highlights the necessity of considering SHE-induced changes in CMOS inverter design to ensure reliable operation. |
| format | Article |
| id | doaj-art-8dd043c189ae4a8493b0b714ef50619f |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
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| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-8dd043c189ae4a8493b0b714ef50619f2025-01-10T00:00:37ZengIEEEIEEE Journal of the Electron Devices Society2168-67342025-01-0113414810.1109/JEDS.2024.352328610816664Impact of Self-Heating Effect on DC and AC Performance of FD-SOI CMOS InverterKang Hee Lee0https://orcid.org/0009-0003-0932-890XMincheol Kim1Jongmin Lee2https://orcid.org/0000-0002-6167-7926Jang Hyun Kim3https://orcid.org/0000-0002-5936-4314Department of Intelligence Semiconductor Engineering, Ajou University, Suwon, South KoreaDepartment of Electrical and Computer Engineering, Ajou University, Suwon, South KoreaDepartment of Intelligence Semiconductor Engineering, Ajou University, Suwon, South KoreaDepartment of Intelligence Semiconductor Engineering, Ajou University, Suwon, South KoreaWe analyzed the impact of self-heating effect (SHE) on fully depleted-silicon on insulator (FD-SOI) CMOS inverter at the 28 nm technology node, considering both DC and AC operations. Specifically, we focused on investigating the principles behind how SHE influences inverter operating characteristics. To analyze the operating characteristics, we employed 2-D technology computer-aided design (TCAD) mixed mode simulation by Synopsys SentaurusTM. In DC operation, the maximum lattice temperature for n-MOSFET and p-MOSFET are 436 K and 449 K, respectively, resulting in a current degradation of 7.9%. Due to the shifted p/n ratio, the gain also varied, with values of 3.65 V/V for without SHE and 4.21 V/V for with SHE. In AC operation, the maximum temperature varies for each operating frequency: 439 K, 358 K, 324 K, and 319 K, from 10 MHz to 4 GHz. Consequently, the rate of p/n ratio deviation and the rate of voltage change over time vary accordingly. SHE exhibits a faster rate of change, showing a difference of 5.43% at 10 MHz. Analysis of propagation delay through an inverter chain showed a 10% increase at 10 MHz. The results indicate that with SHE, the propagation delay increases, and the slew rate becomes steeper, suggesting improved switching characteristics and gain. However, this unintended consequence highlights the necessity of considering SHE-induced changes in CMOS inverter design to ensure reliable operation.https://ieeexplore.ieee.org/document/10816664/FD-SOICMOS inverterself-heating effect (SHE)lattice temperature profilep/n ratioDC operation |
| spellingShingle | Kang Hee Lee Mincheol Kim Jongmin Lee Jang Hyun Kim Impact of Self-Heating Effect on DC and AC Performance of FD-SOI CMOS Inverter IEEE Journal of the Electron Devices Society FD-SOI CMOS inverter self-heating effect (SHE) lattice temperature profile p/n ratio DC operation |
| title | Impact of Self-Heating Effect on DC and AC Performance of FD-SOI CMOS Inverter |
| title_full | Impact of Self-Heating Effect on DC and AC Performance of FD-SOI CMOS Inverter |
| title_fullStr | Impact of Self-Heating Effect on DC and AC Performance of FD-SOI CMOS Inverter |
| title_full_unstemmed | Impact of Self-Heating Effect on DC and AC Performance of FD-SOI CMOS Inverter |
| title_short | Impact of Self-Heating Effect on DC and AC Performance of FD-SOI CMOS Inverter |
| title_sort | impact of self heating effect on dc and ac performance of fd soi cmos inverter |
| topic | FD-SOI CMOS inverter self-heating effect (SHE) lattice temperature profile p/n ratio DC operation |
| url | https://ieeexplore.ieee.org/document/10816664/ |
| work_keys_str_mv | AT kangheelee impactofselfheatingeffectondcandacperformanceoffdsoicmosinverter AT mincheolkim impactofselfheatingeffectondcandacperformanceoffdsoicmosinverter AT jongminlee impactofselfheatingeffectondcandacperformanceoffdsoicmosinverter AT janghyunkim impactofselfheatingeffectondcandacperformanceoffdsoicmosinverter |