High-Performance Self-Powered Photodetector Enabled by Te-Doped GeH Nanostructures Engineering
Two-dimensional (2D) Xenes, including graphene where X represents C, Si, Ge, and Te, represent a groundbreaking class of materials renowned for their extraordinary electrical transport properties, robust photoresponse, and Quantum Spin Hall effects. With the growing interest in 2D materials, researc...
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MDPI AG
2025-04-01
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| author | Junting Zhang Jiexin Chen Shuojia Zheng Da Zhang Shaojuan Luo Huixia Luo |
| author_facet | Junting Zhang Jiexin Chen Shuojia Zheng Da Zhang Shaojuan Luo Huixia Luo |
| author_sort | Junting Zhang |
| collection | DOAJ |
| description | Two-dimensional (2D) Xenes, including graphene where X represents C, Si, Ge, and Te, represent a groundbreaking class of materials renowned for their extraordinary electrical transport properties, robust photoresponse, and Quantum Spin Hall effects. With the growing interest in 2D materials, research on germanene-based systems remains relatively underexplored despite their potential for tailored optoelectronic functionalities. Herein, we demonstrate a facile and rapid chemical synthesis of tellurium-doped germanene hydride (Te-GeH) nanostructures (NSs), achieving precise atomic-scale control. The 2D Te-GeH NSs exhibit a broadband optical absorption spanning ultraviolet (UV) to visible light (VIS), which is a critical feature for multifunctional photodetection. Leveraging this property, we engineer photoelectrochemical (PEC) photodetectors via a simple drop-casting technique. The devices deliver excellent performance, including a high responsivity of 708.5 µA/W, ultrafast response speeds (92 ms rise, 526 ms decay), and a wide operational bandwidth. Remarkably, the detectors operate efficiently at zero-bias voltage, outperforming most existing 2D-material-based PEC systems, and function as self-powered broadband photodetectors. This work not only advances the understanding of germanene derivatives but also unlocks their potential for next-generation optoelectronics, such as energy-efficient sensors and adaptive optical networks. |
| format | Article |
| id | doaj-art-8d4d6ddffb8e478babf8ca7a17ff62db |
| institution | DOAJ |
| issn | 1424-8220 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj-art-8d4d6ddffb8e478babf8ca7a17ff62db2025-08-20T03:13:45ZengMDPI AGSensors1424-82202025-04-01258253010.3390/s25082530High-Performance Self-Powered Photodetector Enabled by Te-Doped GeH Nanostructures EngineeringJunting Zhang0Jiexin Chen1Shuojia Zheng2Da Zhang3Shaojuan Luo4Huixia Luo5School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou 510006, ChinaSchool of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou 510006, ChinaSchool of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou 510006, ChinaSchool of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou 510006, ChinaSchool of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou 510006, ChinaState Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, ChinaTwo-dimensional (2D) Xenes, including graphene where X represents C, Si, Ge, and Te, represent a groundbreaking class of materials renowned for their extraordinary electrical transport properties, robust photoresponse, and Quantum Spin Hall effects. With the growing interest in 2D materials, research on germanene-based systems remains relatively underexplored despite their potential for tailored optoelectronic functionalities. Herein, we demonstrate a facile and rapid chemical synthesis of tellurium-doped germanene hydride (Te-GeH) nanostructures (NSs), achieving precise atomic-scale control. The 2D Te-GeH NSs exhibit a broadband optical absorption spanning ultraviolet (UV) to visible light (VIS), which is a critical feature for multifunctional photodetection. Leveraging this property, we engineer photoelectrochemical (PEC) photodetectors via a simple drop-casting technique. The devices deliver excellent performance, including a high responsivity of 708.5 µA/W, ultrafast response speeds (92 ms rise, 526 ms decay), and a wide operational bandwidth. Remarkably, the detectors operate efficiently at zero-bias voltage, outperforming most existing 2D-material-based PEC systems, and function as self-powered broadband photodetectors. This work not only advances the understanding of germanene derivatives but also unlocks their potential for next-generation optoelectronics, such as energy-efficient sensors and adaptive optical networks.https://www.mdpi.com/1424-8220/25/8/2530Te-GeH nanostructuresphotodetectorphotoelectrochemicalself-powered |
| spellingShingle | Junting Zhang Jiexin Chen Shuojia Zheng Da Zhang Shaojuan Luo Huixia Luo High-Performance Self-Powered Photodetector Enabled by Te-Doped GeH Nanostructures Engineering Sensors Te-GeH nanostructures photodetector photoelectrochemical self-powered |
| title | High-Performance Self-Powered Photodetector Enabled by Te-Doped GeH Nanostructures Engineering |
| title_full | High-Performance Self-Powered Photodetector Enabled by Te-Doped GeH Nanostructures Engineering |
| title_fullStr | High-Performance Self-Powered Photodetector Enabled by Te-Doped GeH Nanostructures Engineering |
| title_full_unstemmed | High-Performance Self-Powered Photodetector Enabled by Te-Doped GeH Nanostructures Engineering |
| title_short | High-Performance Self-Powered Photodetector Enabled by Te-Doped GeH Nanostructures Engineering |
| title_sort | high performance self powered photodetector enabled by te doped geh nanostructures engineering |
| topic | Te-GeH nanostructures photodetector photoelectrochemical self-powered |
| url | https://www.mdpi.com/1424-8220/25/8/2530 |
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