Numerical Investigations and Analysis of Cu2ZnSnS4 Based Solar Cells by SCAPS-1D
This paper reports numerical investigation, using SCAPS-1D program, of the influence of Cu2ZnSnS4 (the so-called CZTS) material features such as thickness, holes, and defects densities on the performances of ZnO:Al/i-ZnO/CdS/CZTS/Mo solar cells structure. We found that the electrical parameters are...
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| Format: | Article |
| Language: | English |
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Wiley
2016-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2016/2152018 |
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| author | M. Djinkwi Wanda S. Ouédraogo F. Tchoffo F. Zougmoré J. M. B. Ndjaka |
| author_facet | M. Djinkwi Wanda S. Ouédraogo F. Tchoffo F. Zougmoré J. M. B. Ndjaka |
| author_sort | M. Djinkwi Wanda |
| collection | DOAJ |
| description | This paper reports numerical investigation, using SCAPS-1D program, of the influence of Cu2ZnSnS4 (the so-called CZTS) material features such as thickness, holes, and defects densities on the performances of ZnO:Al/i-ZnO/CdS/CZTS/Mo solar cells structure. We found that the electrical parameters are seriously affected, when the absorber thickness is lower than 600 nm, mainly due to recombination at CZTS/Molybdenum interface that causes the short-circuit current density loss of 3.6 mA/cm2. An additional source of recombination, inside the absorber layer, affects the short-circuit current density and produces a loss of about 2.1 mA/cm2 above this range of absorber thickness. The J-V characteristic shows that the performance of the device is also limited by a double diode behavior. This effect is reduced when the absorber layer is skinny. Our investigations showed that, for solar cells having a CZTS absorber layer of thin thickness and high-quality materials (defects density ~1015 cm−3), doping less than 1016 cm−3 is especially beneficial. Such CZTS based solar cell devices could lead to conversion efficiencies higher than 15% and to improvement of about 100 mV on the open-circuit voltage value. Our results are in conformity with experimental reports existing in the literature. |
| format | Article |
| id | doaj-art-8d3e0b3b069a4f77af302fa4d74f0f2a |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2016-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-8d3e0b3b069a4f77af302fa4d74f0f2a2025-02-03T01:09:46ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2016-01-01201610.1155/2016/21520182152018Numerical Investigations and Analysis of Cu2ZnSnS4 Based Solar Cells by SCAPS-1DM. Djinkwi Wanda0S. Ouédraogo1F. Tchoffo2F. Zougmoré3J. M. B. Ndjaka4Université de Yaoundé I, Faculté des Sciences, Département de Physique, BP 812, Yaoundé, CameroonUniversité de Yaoundé I, Faculté des Sciences, Département de Physique, BP 812, Yaoundé, CameroonUniversité de Yaoundé I, Faculté des Sciences, Département de Physique, BP 812, Yaoundé, CameroonLaboratoire des Matériaux et Environnement (LA.M.E), UFR-SEA, Université de Ouagadougou, 03 BP 7021, Ouaga 03, Burkina FasoUniversité de Yaoundé I, Faculté des Sciences, Département de Physique, BP 812, Yaoundé, CameroonThis paper reports numerical investigation, using SCAPS-1D program, of the influence of Cu2ZnSnS4 (the so-called CZTS) material features such as thickness, holes, and defects densities on the performances of ZnO:Al/i-ZnO/CdS/CZTS/Mo solar cells structure. We found that the electrical parameters are seriously affected, when the absorber thickness is lower than 600 nm, mainly due to recombination at CZTS/Molybdenum interface that causes the short-circuit current density loss of 3.6 mA/cm2. An additional source of recombination, inside the absorber layer, affects the short-circuit current density and produces a loss of about 2.1 mA/cm2 above this range of absorber thickness. The J-V characteristic shows that the performance of the device is also limited by a double diode behavior. This effect is reduced when the absorber layer is skinny. Our investigations showed that, for solar cells having a CZTS absorber layer of thin thickness and high-quality materials (defects density ~1015 cm−3), doping less than 1016 cm−3 is especially beneficial. Such CZTS based solar cell devices could lead to conversion efficiencies higher than 15% and to improvement of about 100 mV on the open-circuit voltage value. Our results are in conformity with experimental reports existing in the literature.http://dx.doi.org/10.1155/2016/2152018 |
| spellingShingle | M. Djinkwi Wanda S. Ouédraogo F. Tchoffo F. Zougmoré J. M. B. Ndjaka Numerical Investigations and Analysis of Cu2ZnSnS4 Based Solar Cells by SCAPS-1D International Journal of Photoenergy |
| title | Numerical Investigations and Analysis of Cu2ZnSnS4 Based Solar Cells by SCAPS-1D |
| title_full | Numerical Investigations and Analysis of Cu2ZnSnS4 Based Solar Cells by SCAPS-1D |
| title_fullStr | Numerical Investigations and Analysis of Cu2ZnSnS4 Based Solar Cells by SCAPS-1D |
| title_full_unstemmed | Numerical Investigations and Analysis of Cu2ZnSnS4 Based Solar Cells by SCAPS-1D |
| title_short | Numerical Investigations and Analysis of Cu2ZnSnS4 Based Solar Cells by SCAPS-1D |
| title_sort | numerical investigations and analysis of cu2znsns4 based solar cells by scaps 1d |
| url | http://dx.doi.org/10.1155/2016/2152018 |
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